RN2130MFV . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RN2130MFV
Código: Y2.
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 100 kOhm
Resistencia Base-Emisor R2 = 100 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 10 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 0.9 pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: SOT723 VESM
Búsqueda de reemplazo de transistor bipolar RN2130MFV
RN2130MFV Datasheet (PDF)
rn2130mfv.pdf
RN2130MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2130MFV Switching Applications Unit mm Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications 1.2 0.05 With built-in bias resistors 0.8 0.05 Simplify circuit design Reduce a quantity of parts and manufacturing process 1
rn2130fv.pdf
RN2130FV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2130FV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit mm Built-in bias resistors 1.2 0.05 Simplified circuit design 0.8 0.05 Reduced quantity of parts and manufacturing process Complementary to RN1130FV 1 2 3 Equivalent Circuit 1.BASE VESM 2.EMIT
rn2131mfv rn2132mfv.pdf
RN2131MFV,RN2132MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2131MFV,RN2132MFV Unit mm Switching Applications Inverter Circuit Applications Interface Circuit Applications 1.2 0.05 Driver Circuit Applications 0.8 0.05 With built-in bias resistors 1 Simplify circuit design 2 3 Reduce a quantity of parts and manufacturing process Compl
Otros transistores... RN2117F , RN2117MFV , RN2117 , RN2118FT , RN2118F , RN2118MFV , RN2118 , RN2119MFV , BC557 , RN2131MFV , RN2132MFV , RN2301 , RN2302 , RN2303 , RN2304 , RN2305 , RN2306 .
History: UN9115S | K2122B | 2SD23 | GCN53 | 2SC2905 | KD606 | BDT62CF
History: UN9115S | K2122B | 2SD23 | GCN53 | 2SC2905 | KD606 | BDT62CF
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
hy3210 | d313 transistor equivalent | 2sb827 | c5200 datasheet | 2n2614 | 2sa777 replacement | 2sc828 transistor | 2sd357




