RN2130MFV Datasheet, Equivalent, Cross Reference Search
Type Designator: RN2130MFV
SMD Transistor Code: Y2.
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 100 kOhm
Built in Bias Resistor R2 = 100 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.15
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 10
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Collector Capacitance (Cc): 0.9
pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT723
VESM
RN2130MFV Transistor Equivalent Substitute - Cross-Reference Search
RN2130MFV Datasheet (PDF)
rn2130mfv.pdf
RN2130MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2130MFV Switching Applications Unit : mmInverter Circuit Applications Interface Circuit Applications Driver Circuit Applications 1.20.05 With built-in bias resistors 0.80.05 Simplify circuit design Reduce a quantity of parts and manufacturing process 1
rn2130fv.pdf
RN2130FV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2130FV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit : mm Built-in bias resistors 1.20.05 Simplified circuit design 0.80.05 Reduced quantity of parts and manufacturing process Complementary to RN1130FV 1 2 3 Equivalent Circuit 1.BASE VESM 2.EMIT
rn2131mfv rn2132mfv.pdf
RN2131MFV,RN2132MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2131MFV,RN2132MFV Unit : mmSwitching Applications Inverter Circuit Applications Interface Circuit Applications 1.20.05 Driver Circuit Applications 0.80.05 With built-in bias resistors 1 Simplify circuit design 2 3 Reduce a quantity of parts and manufacturing process Compl
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
