RN2132MFV Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RN2132MFV  📄📄 

Código: Y4.

Material: Si

Polaridad de transistor: Pre-Biased-PNP

Resistencia de Entrada Base R1 = 200 kOhm

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.15 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Capacitancia de salida (Cc): 0.9 pF

Ganancia de corriente contínua (hFE): 120

Encapsulados: SOT723 VESM

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RN2132MFV datasheet

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RN2132MFV

RN2131MFV,RN2132MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2131MFV,RN2132MFV Unit mm Switching Applications Inverter Circuit Applications Interface Circuit Applications 1.2 0.05 Driver Circuit Applications 0.8 0.05 With built-in bias resistors 1 Simplify circuit design 2 3 Reduce a quantity of parts and manufacturing process Compl

 9.1. Size:110K  1
 rn2130fv.pdf pdf_icon

RN2132MFV

RN2130FV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2130FV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit mm Built-in bias resistors 1.2 0.05 Simplified circuit design 0.8 0.05 Reduced quantity of parts and manufacturing process Complementary to RN1130FV 1 2 3 Equivalent Circuit 1.BASE VESM 2.EMIT

 9.2. Size:153K  toshiba
 rn2130mfv.pdf pdf_icon

RN2132MFV

RN2130MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2130MFV Switching Applications Unit mm Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications 1.2 0.05 With built-in bias resistors 0.8 0.05 Simplify circuit design Reduce a quantity of parts and manufacturing process 1

Otros transistores... RN2117, RN2118FT, RN2118F, RN2118MFV, RN2118, RN2119MFV, RN2130MFV, RN2131MFV, 13009, RN2301, RN2302, RN2303, RN2304, RN2305, RN2306, RN2307, RN2308