RN2132MFV Datasheet. Specs and Replacement

Type Designator: RN2132MFV  📄📄 

SMD Transistor Code: Y4.

Material of Transistor: Si

Polarity: Pre-Biased-PNP

Built in Bias Resistor R1 = 200 kOhm

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Collector Capacitance (Cc): 0.9 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: SOT723 VESM

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RN2132MFV datasheet

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RN2132MFV

RN2131MFV,RN2132MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2131MFV,RN2132MFV Unit mm Switching Applications Inverter Circuit Applications Interface Circuit Applications 1.2 0.05 Driver Circuit Applications 0.8 0.05 With built-in bias resistors 1 Simplify circuit design 2 3 Reduce a quantity of parts and manufacturing process Compl... See More ⇒

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RN2132MFV

RN2130FV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2130FV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit mm Built-in bias resistors 1.2 0.05 Simplified circuit design 0.8 0.05 Reduced quantity of parts and manufacturing process Complementary to RN1130FV 1 2 3 Equivalent Circuit 1.BASE VESM 2.EMIT... See More ⇒

 9.2. Size:153K  toshiba

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RN2132MFV

RN2130MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2130MFV Switching Applications Unit mm Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications 1.2 0.05 With built-in bias resistors 0.8 0.05 Simplify circuit design Reduce a quantity of parts and manufacturing process 1... See More ⇒

Detailed specifications: RN2117, RN2118FT, RN2118F, RN2118MFV, RN2118, RN2119MFV, RN2130MFV, RN2131MFV, 13009, RN2301, RN2302, RN2303, RN2304, RN2305, RN2306, RN2307, RN2308

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