2N575 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N575
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 187 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 28 V
Corriente del colector DC máxima (Ic): 25 A
Temperatura operativa máxima (Tj): 100 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 0.1 MHz
Ganancia de corriente contínua (hfe): 10
Paquete / Cubierta: TO61
Búsqueda de reemplazo de transistor bipolar 2N575
2N575 Datasheet (PDF)
2n5758re.pdf
Order this documentMOTOROLAby 2N5758/DSEMICONDUCTOR TECHNICAL DATA2N5745(See 2N4398)2N5758High-Voltage High-PowerSilicon Transistors6 AMPERE. . . designed for use in high power audio amplifier applications and high voltagePOWER TRANSISTORswitching regulator circuits.NPN SILICON High CollectorEmitter Sustaining Voltage 100140 VOLTSVCEO(sus) = 100 Vdc (
2n5759.pdf
2N5759Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 120V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 6A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a
2n5758.pdf
2N5758Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 100V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 6A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a
2n5758 2n5759 2n5760.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5758 2N5759 2N5760 DESCRIPTION With TO-3 package Low collector-emitter saturation voltage APPLICATIONS For use in high power audio amplifier applications and high voltage switching regulator circuits PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol
2n5758 2n5759 2n5760.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5758 2N5759 2N5760 DESCRIPTION With TO-3 package Low collector saturation voltage Excellent safe operating area APPLICATIONS For use in high power audio amplifier applications and high voltage switching regulator circuits PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outlin
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
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