Биполярный транзистор 2N575 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2N575
Тип материала: Ge
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 187 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 28 V
Макcимальный постоянный ток коллектора (Ic): 25 A
Предельная температура PN-перехода (Tj): 100 °C
Граничная частота коэффициента передачи тока (ft): 0.1 MHz
Статический коэффициент передачи тока (hfe): 10
Корпус транзистора: TO61
2N575 Datasheet (PDF)
2n5758re.pdf
Order this documentMOTOROLAby 2N5758/DSEMICONDUCTOR TECHNICAL DATA2N5745(See 2N4398)2N5758High-Voltage High-PowerSilicon Transistors6 AMPERE. . . designed for use in high power audio amplifier applications and high voltagePOWER TRANSISTORswitching regulator circuits.NPN SILICON High CollectorEmitter Sustaining Voltage 100140 VOLTSVCEO(sus) = 100 Vdc (
2n5759.pdf
2N5759Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 120V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 6A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a
2n5758.pdf
2N5758Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 100V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 6A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a
2n5758 2n5759 2n5760.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5758 2N5759 2N5760 DESCRIPTION With TO-3 package Low collector-emitter saturation voltage APPLICATIONS For use in high power audio amplifier applications and high voltage switching regulator circuits PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol
2n5758 2n5759 2n5760.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5758 2N5759 2N5760 DESCRIPTION With TO-3 package Low collector saturation voltage Excellent safe operating area APPLICATIONS For use in high power audio amplifier applications and high voltage switching regulator circuits PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outlin
Другие транзисторы... 2N574 , 2N5740 , 2N5741 , 2N5742 , 2N5743 , 2N5744 , 2N5745 , 2N574A , B772 , 2N5758 , 2N5759 , 2N575A , 2N576 , 2N5760 , 2N5761 , 2N5762 , 2N5763 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050