2N575 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N575
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 187 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 28 V
Maximum Collector Current |Ic max|: 25 A
Max. Operating Junction Temperature (Tj): 100 °C
Transition Frequency (ft): 0.1 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO61
2N575 Transistor Equivalent Substitute - Cross-Reference Search
2N575 Datasheet (PDF)
2n5758re.pdf
Order this documentMOTOROLAby 2N5758/DSEMICONDUCTOR TECHNICAL DATA2N5745(See 2N4398)2N5758High-Voltage High-PowerSilicon Transistors6 AMPERE. . . designed for use in high power audio amplifier applications and high voltagePOWER TRANSISTORswitching regulator circuits.NPN SILICON High CollectorEmitter Sustaining Voltage 100140 VOLTSVCEO(sus) = 100 Vdc (
2n5759.pdf
2N5759Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 120V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 6A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a
2n5758.pdf
2N5758Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 100V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 6A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a
2n5758 2n5759 2n5760.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5758 2N5759 2N5760 DESCRIPTION With TO-3 package Low collector-emitter saturation voltage APPLICATIONS For use in high power audio amplifier applications and high voltage switching regulator circuits PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol
2n5758 2n5759 2n5760.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5758 2N5759 2N5760 DESCRIPTION With TO-3 package Low collector saturation voltage Excellent safe operating area APPLICATIONS For use in high power audio amplifier applications and high voltage switching regulator circuits PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outlin
Datasheet: 2N574 , 2N5740 , 2N5741 , 2N5742 , 2N5743 , 2N5744 , 2N5745 , 2N574A , B772 , 2N5758 , 2N5759 , 2N575A , 2N576 , 2N5760 , 2N5761 , 2N5762 , 2N5763 .
