RN4911FE Todos los transistores

 

RN4911FE . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RN4911FE
   Código: VM
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN*PNP
   Resistencia de Entrada Base R1 = 10 kOhm

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.1 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 200 MHz
   Capacitancia de salida (Cc): 3 pF
   Ganancia de corriente contínua (hfe): 120
   Paquete / Cubierta: SOT563 ES6
     - Selección de transistores por parámetros

 

RN4911FE Datasheet (PDF)

 ..1. Size:101K  toshiba
 rn4911fe.pdf pdf_icon

RN4911FE

RN4911FE TOSHIBA Transistor Silicon PNPNPN Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN4911FE Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts co

 8.1. Size:87K  toshiba
 rn4911.pdf pdf_icon

RN4911FE

RN4911 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) RN4911 Switching, Inverter Circuit, Interface Circuit Unit: mmAnd Driver Circuit Applications Includeing two devices in US6 (ultra super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing pr

 9.1. Size:88K  toshiba
 rn4910.pdf pdf_icon

RN4911FE

RN4910 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) RN4910 Switching, Inverter Circuit, Interface Circuit Unit: mmAnd Driver Circuit Applications Includeing two devices in US6 (ultra super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing pr

 9.2. Size:102K  toshiba
 rn4910fe.pdf pdf_icon

RN4911FE

RN4910FE TOSHIBA Transistor Silicon PNP NPN Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN4910FE Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts

MOSTRAR MÁS

Otros transistores... HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , D667 , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .

History: KSC839Y | CN452 | BUX17A | NSVBC856BM3 | KTC4347 | UMB6N | HBD437T

 

 
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