All Transistors. RN4911FE Datasheet

 

RN4911FE Datasheet and Replacement


   Type Designator: RN4911FE
   SMD Transistor Code: VM
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN*PNP
   Built in Bias Resistor R1 = 10 kOhm
   Maximum Collector Power Dissipation (Pc): 0.1 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Collector Capacitance (Cc): 3 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: SOT563 ES6
      - BJT Cross-Reference Search

   

RN4911FE Datasheet (PDF)

 ..1. Size:101K  toshiba
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RN4911FE

RN4911FE TOSHIBA Transistor Silicon PNPNPN Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN4911FE Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts co

 8.1. Size:87K  toshiba
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RN4911FE

RN4911 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) RN4911 Switching, Inverter Circuit, Interface Circuit Unit: mmAnd Driver Circuit Applications Includeing two devices in US6 (ultra super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing pr

 9.1. Size:88K  toshiba
rn4910.pdf pdf_icon

RN4911FE

RN4910 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) RN4910 Switching, Inverter Circuit, Interface Circuit Unit: mmAnd Driver Circuit Applications Includeing two devices in US6 (ultra super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing pr

 9.2. Size:102K  toshiba
rn4910fe.pdf pdf_icon

RN4911FE

RN4910FE TOSHIBA Transistor Silicon PNP NPN Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN4910FE Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: RN1909 | DTS3704 | BCX74-40 | JE9015B | BF748 | NTE2547 | D44VM4

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