All Transistors. RN4911FE Datasheet

 

RN4911FE Datasheet and Replacement


   Type Designator: RN4911FE
   SMD Transistor Code: VM
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN*PNP
   Built in Bias Resistor R1 = 10 kOhm
   Maximum Collector Power Dissipation (Pc): 0.1 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Collector Capacitance (Cc): 3 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: SOT563 ES6
 

 RN4911FE Substitution

   - BJT ⓘ Cross-Reference Search

   

RN4911FE Datasheet (PDF)

 ..1. Size:101K  toshiba
rn4911fe.pdf pdf_icon

RN4911FE

RN4911FE TOSHIBA Transistor Silicon PNPNPN Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN4911FE Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts co

 8.1. Size:87K  toshiba
rn4911.pdf pdf_icon

RN4911FE

RN4911 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) RN4911 Switching, Inverter Circuit, Interface Circuit Unit: mmAnd Driver Circuit Applications Includeing two devices in US6 (ultra super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing pr

 9.1. Size:88K  toshiba
rn4910.pdf pdf_icon

RN4911FE

RN4910 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) RN4910 Switching, Inverter Circuit, Interface Circuit Unit: mmAnd Driver Circuit Applications Includeing two devices in US6 (ultra super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing pr

 9.2. Size:102K  toshiba
rn4910fe.pdf pdf_icon

RN4911FE

RN4910FE TOSHIBA Transistor Silicon PNP NPN Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN4910FE Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts

Datasheet: RN4907FE , RN4907 , RN4908FE , RN4908 , RN4909FE , RN4909 , RN4910FE , RN4910 , 2SB817 , RN4911 , RN4962FE , RN4981AFS , RN4981FE , RN4981FS , RN4981 , RN4982AFS , RN4982FE .

History: SS8550B | 2SB1001 | RN47A4JE | NTE247

Keywords - RN4911FE transistor datasheet

 RN4911FE cross reference
 RN4911FE equivalent finder
 RN4911FE lookup
 RN4911FE substitution
 RN4911FE replacement

 

 
Back to Top

 


 
.