MT3S22P Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MT3S22P  📄📄 

Código: T5

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.4 W

Tensión colector-base (Vcb): 12 V

Tensión colector-emisor (Vce): 6 V

Tensión emisor-base (Veb): 2 V

Corriente del colector DC máxima (Ic): 0.08 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 8500 MHz

Ganancia de corriente contínua (hFE): 100

Encapsulados: PW-MINI

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MT3S22P datasheet

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 mt3s22p.pdf pdf_icon

MT3S22P

MT3S22P TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S22P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit mm FEATURES Low Noise Figure NF=1.5dB(Typ.) (@f=1GHz) High Gain S21e 2=10.5dB(Typ.) (@f=1GHz) Marking T 5 PW-Mini JEDEC - JEITA SC-62 TOSHIBA 2-5K1A Absolute Maximum Ratings (Ta = 25 C) Weight 0.05 g (Typ.) Characterist

 9.1. Size:169K  toshiba
 mt3s21p.pdf pdf_icon

MT3S22P

MT3S21P TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S21P VHF-UHF Low-Noise, Low-Distortion Amplifier Application Unit mm FEATURES Low-Noise Figure NF=1.55 dB (typ.) (@f=1 GHz) High Gain S21e 2=11 dB (typ.) (@f=1 GHz) Marking T 2 PW-Mini JEDEC - JEITA SC-62 TOSHIBA 2-5K1A Absolute Maximum Ratings (Ta = 25 C) Weight 0.05 g (Typ.) Characterist

 9.2. Size:178K  toshiba
 mt3s20p.pdf pdf_icon

MT3S22P

MT3S20P TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S20P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit mm FEATURES Low Noise Figure NF=1.45dB(Typ.) (@f=1GHz) High Gain S21e 2=11dB(Typ.) (@f=1GHz) Marking M U PW-Mini JEDEC - JEITA SC-62 TOSHIBA 2-5K1A Absolute Maximum Ratings (Ta = 25 C) Weight 0.05 g (Typ.) Characteristi

 9.3. Size:182K  toshiba
 mt3s20r.pdf pdf_icon

MT3S22P

MT3S20R TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S20R VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit mm +0.08 0.42 +0.08 -0.05 0.17 0.05 M A -0.07 FEATURES 3 Low Noise Figure NF=1.45dB(Typ.) (@ f=1GHz) High Gain S21e 2=12dB(Typ.) (@ f=1GHz) 1 2 0.95 0.95 2.9 0.2 A Marking 3 1. Base 2. Emitter 3. Collec

MOSTRAR MÁS

Otros transistores... MT3S16U, MT3S19, MT3S19R, MT3S19TU, MT3S20P, MT3S20R, MT3S20TU, MT3S21P, A940, MT3S35FS, MT3S37FS, MT3S41FS, MT4S03A, MT4S03AU, MT4S03BU, MT4S06U, MT4S23U