All Transistors. MT3S22P Datasheet

 

MT3S22P Datasheet and Replacement


   Type Designator: MT3S22P
   SMD Transistor Code: T5
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.4 W
   Maximum Collector-Base Voltage |Vcb|: 12 V
   Maximum Collector-Emitter Voltage |Vce|: 6 V
   Maximum Emitter-Base Voltage |Veb|: 2 V
   Maximum Collector Current |Ic max|: 0.08 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 8500 MHz
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: PW-MINI
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MT3S22P Datasheet (PDF)

 ..1. Size:189K  toshiba
 mt3s22p.pdf pdf_icon

MT3S22P

MT3S22P TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S22P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mmFEATURES Low Noise Figure: NF=1.5dB(Typ.) (@f=1GHz) High Gain: |S21e|2=10.5dB(Typ.) (@f=1GHz) Marking T 5 PW-Mini JEDEC -JEITA SC-62TOSHIBA 2-5K1AAbsolute Maximum Ratings (Ta = 25C) Weight: 0.05 g (Typ.) Characterist

 9.1. Size:169K  toshiba
 mt3s21p.pdf pdf_icon

MT3S22P

MT3S21P TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S21P VHF-UHF Low-Noise, Low-Distortion Amplifier Application Unit: mmFEATURES Low-Noise Figure: NF=1.55 dB (typ.) (@f=1 GHz) High Gain: |S21e|2=11 dB (typ.) (@f=1 GHz) Marking T 2 PW-Mini JEDEC -JEITA SC-62TOSHIBA 2-5K1AAbsolute Maximum Ratings (Ta = 25C) Weight: 0.05 g (Typ.) Characterist

 9.2. Size:178K  toshiba
 mt3s20p.pdf pdf_icon

MT3S22P

MT3S20P TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S20P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mmFEATURES Low Noise Figure: NF=1.45dB(Typ.) (@f=1GHz) High Gain: |S21e|2=11dB(Typ.) (@f=1GHz) Marking M U PW-Mini JEDEC -JEITA SC-62TOSHIBA 2-5K1AAbsolute Maximum Ratings (Ta = 25C) Weight: 0.05 g (Typ.) Characteristi

 9.3. Size:182K  toshiba
 mt3s20r.pdf pdf_icon

MT3S22P

MT3S20R TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S20R VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm +0.080.42+0.08-0.050.170.05M A -0.07FEATURES 3 Low Noise Figure:NF=1.45dB(Typ.) (@ f=1GHz) High Gain:|S21e|2=12dB(Typ.) (@ f=1GHz) 120.95 0.952.90.2A Marking 3 1. Base2. Emitter3. Collec

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History: 2N1760 | BUW29 | BF249-1 | 2N5109UB | 2N1223 | 2SC2999D | CMST5087

Keywords - MT3S22P transistor datasheet

 MT3S22P cross reference
 MT3S22P equivalent finder
 MT3S22P lookup
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