2SC6011A Todos los transistores

 

2SC6011A Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SC6011A
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 160 W
   Tensión colector-base (Vcb): 230 V
   Tensión colector-emisor (Vce): 230 V
   Corriente del colector DC máxima (Ic): 15 A

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 20 MHz
   Ganancia de corriente contínua (hfe): 50
   Paquete / Cubierta: TO3P
 

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2SC6011A datasheet

 ..1. Size:208K  sanken-ele
2sc6011a.pdf pdf_icon

2SC6011A

2-1 Transistors Absolute Maximum Ratings ICBO hFE VCBO VCEO Ic Pc Conditions Conditions Part Number Applications VCB VCE Ic (V) (V) (A) (W) ( A) (V) min max (V) (A) 2SC2837 Audio, general-purpose 150 150 10 100 100 150 50 180 4 3 2SC2921 Audio, general-purpose 160 160 15 150 100 160 50 180 4 5 2SC2922 Audio, general-purpose 180 180 17 200 100 180 30 180 4 8 2SC3263 Audio, gener

 ..2. Size:215K  inchange semiconductor
2sc6011a.pdf pdf_icon

2SC6011A

isc Silicon NPN Power Transistor 2SC6011A DESCRIPTION High Power Handling capacity High Collector-Emitter Breakdown Voltage- V = 230V(Min) (BR)CEO Complement to Type 2SA2151A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 100W high fidelity audio frequency amplifier output stage

 ..3. Size:184K  inchange semiconductor
2sc6011 2sc6011a.pdf pdf_icon

2SC6011A

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC6011/A DESCRIPTION Collector-Emitter Breakdown Voltage- V = 200V(Min)-2SC6011 (BR)CEO = 200V(Min)-2SC6011A Good Linearity of h FE Complement to Type 2SA2151/A 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general pu

 7.1. Size:181K  inchange semiconductor
2sc6011.pdf pdf_icon

2SC6011A

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC6011 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 200V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA2151 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE

Otros transistores... 2SC4883 , 2SC4883A , 2SC4886 , 2SC5071 , 2SC5099 , 2SC5100 , 2SC5101 , 2SC6011 , B647 , 2SD2389 , 2SD2390 , 2SD2401 , 2SD2438 , 2SD2439 , 2SA1037AK , 2SA1514K , 2SA1576A .

 

 

 


 
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