2SC6011A Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC6011A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 160 W
Maximum Collector-Base Voltage |Vcb|: 230 V
Maximum Collector-Emitter Voltage |Vce|: 230 V
Maximum Collector Current |Ic max|: 15 A
Transition Frequency (ft): 20 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO3P
2SC6011A Transistor Equivalent Substitute - Cross-Reference Search
2SC6011A Datasheet (PDF)
1.1. 2sc6011a.pdf 
Size:208K _sanken-ele
2-1 Transistors Absolute Maximum Ratings ICBO hFE VCBO VCEO Ic Pc Conditions Conditions Part Number Applications VCB VCE Ic (V) (V) (A) (W) ( A) (V) min max (V) (A) 2SC2837 Audio, general-purpose 150 150 10 100 100 150 50 180 4 3 2SC2921 Audio, general-purpose 160 160 15 150 100 160 50 180 4 5 2SC2922 Audio, general-purpose 180 180 17 200 100 180 30 180 4 8 2SC3263 Audio, general-p
3.1. 2sc6011 a.pdf Size:233K _inchange_semiconductor
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC6011/A DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min)-2SC6011 = 200V(Min)-2SC6011A ·Good Linearity of hFE ·Complement to Type 2SA2151/A APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT
4.1. 2sc6017-e.pdf Size:333K _update
Ordering number : EN8275A 2SA2169/2SC6017 Bipolar Transistor http://onsemi.com (-)50V, (-)10A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Applications • Relay drivers, lamp drivers, motor drivers Features • Adoption of MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching ( ): 2SA2169 Specifications Absolute Maximum R
4.2. 2sc6017-tl-e.pdf Size:333K _update
Ordering number : EN8275A 2SA2169/2SC6017 Bipolar Transistor http://onsemi.com (-)50V, (-)10A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Applications • Relay drivers, lamp drivers, motor drivers Features • Adoption of MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching ( ): 2SA2169 Specifications Absolute Maximum R
4.3. 2sc6010.pdf Size:182K _toshiba
2SC6010 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6010 High Voltage Switching Applications Unit: mm Switching Regulator Applications DC-DC Converter Applications • High speed switching: tf = 0.24?s (max) (IC = 0.3A) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 600 V Collector-emitter voltage VCEX 600 V C
4.4. 2sc6013.pdf Size:34K _sanyo
Ordering number : EN8556 2SC6013 NPN Epitaxial Planar Silicon Transistor 2SC6013 DC / DC Converter Applications Applications • Relay drivers, lamp drivers, motor drivers, flash. Features • Adoption of MBIT process. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Narrow hFE range. • High allowable p
4.5. 2sa2169 2sc6017.pdf Size:61K _sanyo
Ordering number : ENN8275 2SA2169 / 2SC6017 PNP / NPN Epitaxial Planar Silicon Transistors High-Current Switching 2SA2169 / 2SC6017 Applications Applications Relay drivers, lamp drivers, motor drivers. Features Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications ( ) : 2SA2169 Absolute Maximum
4.6. 2sc6012.pdf Size:89K _panasonic
Power Transistors 2SC6012 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 15.50.5 3.00.3 ? 3.20.1 5? 5? Features High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching 5? 5? Wide safe oeration area (4.0) 5? 2.00.2 1.10.1 Absolute Maximum Ratings TC = 25C 0.70.1 Parameter S
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 431 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
