2SD2499 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SD2499 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2499 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV Unit: mm High Voltage : VCBO = 1500 V Low Saturation Voltage : V = 5 V (Max.) CE (sat) High Speed : t = 0.3 s (Typ.) f Bult-in Damper Type Collector Metal (Fin) is Fully Covered with Mold Resin. MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL

isc Silicon NPN Power Transistor 2SD2499DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

2SD2498 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2498 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit: mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : V = 5 V (Max.) CE (sat) High Speed : t = 0.4 s (Typ.) f Collector Metal (Fin) is Fully Covered with Mold Resin. MAXIMUM RATI

2SD2491, 2SD2492Silicon NPN EpitaxialApplicationLow frequency high voltage amplifierFeatures Isolated packageTO-126FMOutlineTO-126FM1. Emitter2. Collector3. Base1232SD2491, 2SD2492Absolute Maximum Ratings (Ta = 25C)RatingsItem Symbol 2SD2491 2SD2492 UnitCollector to base voltage VCBO 160 200 VCollector to emitter voltage VCEO 160 200 VEmitter to b

Product Specification www.jmnic.com Silicon NPN Darlington Power Transistors 2SD2493 DESCRIPTION With TO-3PN package Complement to type 2SB1624 APPLICATIONS Audio ,regulator and general purpose PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterFig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=) SYMBOL PA

Product Specification www.jmnic.com Silicon NPN Darlington Power Transistors 2SD2494 DESCRIPTION With TO-3PML package Complement to type 2SB1625 APPLICATIONS Audio, Series regulator General Purpose PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3PML) and symbol Maximum absolute ratings(Tc=25) SYMBOL PARAMETER CONDITI

Product Specification www.jmnic.com Silicon NPN Darlington Power Transistors 2SD2495 DESCRIPTION With TO-220F package Complement to type 2SB1626 APPLICATIONS For audio,series regulator and general purpose applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25) SYMBOL PARA

Equivalent circuitCBDarlington 2SD2493(70)ESilicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1624)Application : Audio, Series Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-100(TO3P)2SD2493Symbol 2SD2493 Symbol Conditions UnitUnit0.24.80.415.6100max AVCB

CEquivalent circuitBDarlington 2SD2494(70)ESilicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1625)Application : Audio, Series Regulator and General Purpose(Ta=25C) Absolute maximum ratings (Ta=25C) Electrical Characteristics External Dimensions FM100(TO3PF)Symbol 2SD2494 Unit Symbol Conditions 2SD2494 Unit0.20.2 5.515.60.23.45VCBO

CEquivalent circuitBDarlington 2SD2495(70)ESilicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1626) Application : Audio, Series Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F)Symbol 2SD2495 Symbol Conditions 2SD2495 UnitUnit0.24.20.210.1c0.5VCBO 110 ICB

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD2490DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 200V(Min)(BR)CEOHigh DC current gain: h = 1000(Min) @I = 1AFE CLow Collector Saturation Voltgae-: V = 1.5V(Max.)@ I = 1ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio ,re

isc Silicon NPN Darlington Power Transistor 2SD2493DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 110V(Min)(BR)CEOHigh DC Current Gain-: h = 5000( Min.) @(I = 5A, V = 4V)FE C CELow Collector Saturation Voltage-: V = 2.5V(Max)@ (I = 5A, I = 5mA)CE(sat) C BComplement to Type 2SB1624Minimum Lot-to-Lot variations for robust device performanceand reliable op

isc Silicon NPN Darlington Power Transistor 2SD2494DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 110V(Min)(BR)CEOHigh DC Current Gain-: h = 5000( Min.) @(I = 5A, V = 4V)FE C CELow Collector Saturation Voltage-: V = 2.5V(Max)@ (I = 5A, I = 5mA)CE(sat) C BComplement to Type 2SB1625Minimum Lot-to-Lot variations for robust deviceperformance and reliable op

isc Silicon NPN Power Transistor 2SD2498DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for high resolution display,color TVHigh speed switching applicationsABSOLUTE MAXIMUM RATINGS(T =25

isc Silicon NPN Darlington Power Transistor 2SD2495DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 110V(Min)(BR)CEOHigh DC Current Gain-: h = 5000( Min.) @(I = 5A, V = 4V)FE C CELow Collector Saturation Voltage-: V = 2.5V(Max)@ (I = 5A, I = 5mA)CE(sat) C BComplement to Type 2SB1626Minimum Lot-to-Lot variations for robust deviceperformance and reliable op