2SD2499 - Даташиты. Аналоги. Основные параметры

2SD2499 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2499 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV Unit mm High Voltage VCBO = 1500 V Low Saturation Voltage V = 5 V (Max.) CE (sat) High Speed t = 0.3 s (Typ.) f Bult-in Damper Type Collector Metal (Fin) is Fully Covered with Mold Resin. MAXIMUM RATINGS (Tc = 25 C) CHARACTERISTIC SYMBOL

isc Silicon NPN Power Transistor 2SD2499 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE

2SD2498 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2498 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage VCBO = 1500 V Low Saturation Voltage V = 5 V (Max.) CE (sat) High Speed t = 0.4 s (Typ.) f Collector Metal (Fin) is Fully Covered with Mold Resin. MAXIMUM RATI

2SD2491, 2SD2492 Silicon NPN Epitaxial Application Low frequency high voltage amplifier Features Isolated package TO-126FM Outline TO-126FM 1. Emitter 2. Collector 3. Base 1 2 3 2SD2491, 2SD2492 Absolute Maximum Ratings (Ta = 25 C) Ratings Item Symbol 2SD2491 2SD2492 Unit Collector to base voltage VCBO 160 200 V Collector to emitter voltage VCEO 160 200 V Emitter to b

Product Specification www.jmnic.com Silicon NPN Darlington Power Transistors 2SD2493 DESCRIPTION With TO-3PN package Complement to type 2SB1624 APPLICATIONS Audio ,regulator and general purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta= ) SYMBOL PA

Product Specification www.jmnic.com Silicon NPN Darlington Power Transistors 2SD2494 DESCRIPTION With TO-3PML package Complement to type 2SB1625 APPLICATIONS Audio, Series regulator General Purpose PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Maximum absolute ratings(Tc=25 ) SYMBOL PARAMETER CONDITI

Product Specification www.jmnic.com Silicon NPN Darlington Power Transistors 2SD2495 DESCRIPTION With TO-220F package Complement to type 2SB1626 APPLICATIONS For audio,series regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARA

Equivalent circuit C B Darlington 2SD2493 (70 ) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1624) Application Audio, Series Regulator and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions MT-100(TO3P) 2SD2493 Symbol 2SD2493 Symbol Conditions Unit Unit 0.2 4.8 0.4 15.6 100max A VCB

C Equivalent circuit B Darlington 2SD2494 (70 ) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1625) Application Audio, Series Regulator and General Purpose (Ta=25 C) Absolute maximum ratings (Ta=25 C) Electrical Characteristics External Dimensions FM100(TO3PF) Symbol 2SD2494 Unit Symbol Conditions 2SD2494 Unit 0.2 0.2 5.5 15.6 0.2 3.45 VCBO

C Equivalent circuit B Darlington 2SD2495 (70 ) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1626) Application Audio, Series Regulator and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM20(TO220F) Symbol 2SD2495 Symbol Conditions 2SD2495 Unit Unit 0.2 4.2 0.2 10.1 c0.5 VCBO 110 ICB

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD2490 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 200V(Min) (BR)CEO High DC current gain h = 1000(Min) @I = 1A FE C Low Collector Saturation Voltgae- V = 1.5V(Max.)@ I = 1A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio ,re

isc Silicon NPN Darlington Power Transistor 2SD2493 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 110V(Min) (BR)CEO High DC Current Gain- h = 5000( Min.) @(I = 5A, V = 4V) FE C CE Low Collector Saturation Voltage- V = 2.5V(Max)@ (I = 5A, I = 5mA) CE(sat) C B Complement to Type 2SB1624 Minimum Lot-to-Lot variations for robust device performance and reliable op

isc Silicon NPN Darlington Power Transistor 2SD2494 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 110V(Min) (BR)CEO High DC Current Gain- h = 5000( Min.) @(I = 5A, V = 4V) FE C CE Low Collector Saturation Voltage- V = 2.5V(Max)@ (I = 5A, I = 5mA) CE(sat) C B Complement to Type 2SB1625 Minimum Lot-to-Lot variations for robust device performance and reliable op

isc Silicon NPN Darlington Power Transistor 2SD2495 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 110V(Min) (BR)CEO High DC Current Gain- h = 5000( Min.) @(I = 5A, V = 4V) FE C CE Low Collector Saturation Voltage- V = 2.5V(Max)@ (I = 5A, I = 5mA) CE(sat) C B Complement to Type 2SB1626 Minimum Lot-to-Lot variations for robust device performance and reliable op