All Transistors. 2SD2499 Datasheet

 

2SD2499 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SD2499
   Material of Transistor: Si
   Polarity: NPN
   Built in Bias Resistor R2 = 0.04 kOhm
   Maximum Collector Power Dissipation (Pc): 50 W
   Maximum Collector-Base Voltage |Vcb|: 1500 V
   Maximum Collector-Emitter Voltage |Vce|: 600 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 2 MHz
   Collector Capacitance (Cc): 95 pF
   Forward Current Transfer Ratio (hFE), MIN: 8
   Noise Figure, dB: -
   Package: TO3PHIS

 2SD2499 Transistor Equivalent Substitute - Cross-Reference Search

   

2SD2499 Datasheet (PDF)

 ..1. Size:268K  toshiba
2sd2499.pdf

2SD2499
2SD2499

2SD2499 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2499 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV Unit: mm High Voltage : VCBO = 1500 V Low Saturation Voltage : V = 5 V (Max.) CE (sat) High Speed : t = 0.3 s (Typ.) f Bult-in Damper Type Collector Metal (Fin) is Fully Covered with Mold Resin. MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL

 ..2. Size:201K  inchange semiconductor
2sd2499.pdf

2SD2499
2SD2499

isc Silicon NPN Power Transistor 2SD2499DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

 8.1. Size:270K  toshiba
2sd2498.pdf

2SD2499
2SD2499

2SD2498 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2498 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit: mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : V = 5 V (Max.) CE (sat) High Speed : t = 0.4 s (Typ.) f Collector Metal (Fin) is Fully Covered with Mold Resin. MAXIMUM RATI

 8.2. Size:26K  hitachi
2sd2491 2sd2492.pdf

2SD2499
2SD2499

2SD2491, 2SD2492Silicon NPN EpitaxialApplicationLow frequency high voltage amplifierFeatures Isolated packageTO-126FMOutlineTO-126FM1. Emitter2. Collector3. Base1232SD2491, 2SD2492Absolute Maximum Ratings (Ta = 25C)RatingsItem Symbol 2SD2491 2SD2492 UnitCollector to base voltage VCBO 160 200 VCollector to emitter voltage VCEO 160 200 VEmitter to b

 8.3. Size:185K  no
2sd2490.pdf

2SD2499

 8.4. Size:89K  jmnic
2sd2493.pdf

2SD2499
2SD2499

Product Specification www.jmnic.com Silicon NPN Darlington Power Transistors 2SD2493 DESCRIPTION With TO-3PN package Complement to type 2SB1624 APPLICATIONS Audio ,regulator and general purpose PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterFig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=) SYMBOL PA

 8.5. Size:86K  jmnic
2sd2494.pdf

2SD2499
2SD2499

Product Specification www.jmnic.com Silicon NPN Darlington Power Transistors 2SD2494 DESCRIPTION With TO-3PML package Complement to type 2SB1625 APPLICATIONS Audio, Series regulator General Purpose PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3PML) and symbol Maximum absolute ratings(Tc=25) SYMBOL PARAMETER CONDITI

 8.6. Size:84K  jmnic
2sd2495.pdf

2SD2499
2SD2499

Product Specification www.jmnic.com Silicon NPN Darlington Power Transistors 2SD2495 DESCRIPTION With TO-220F package Complement to type 2SB1626 APPLICATIONS For audio,series regulator and general purpose applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25) SYMBOL PARA

 8.7. Size:25K  sanken-ele
2sd2493.pdf

2SD2499

Equivalent circuitCBDarlington 2SD2493(70)ESilicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1624)Application : Audio, Series Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-100(TO3P)2SD2493Symbol 2SD2493 Symbol Conditions UnitUnit0.24.80.415.6100max AVCB

 8.8. Size:25K  sanken-ele
2sd2494.pdf

2SD2499

CEquivalent circuitBDarlington 2SD2494(70)ESilicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1625)Application : Audio, Series Regulator and General Purpose(Ta=25C) Absolute maximum ratings (Ta=25C) Electrical Characteristics External Dimensions FM100(TO3PF)Symbol 2SD2494 Unit Symbol Conditions 2SD2494 Unit0.20.2 5.515.60.23.45VCBO

 8.9. Size:24K  sanken-ele
2sd2495.pdf

2SD2499

CEquivalent circuitBDarlington 2SD2495(70)ESilicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1626) Application : Audio, Series Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F)Symbol 2SD2495 Symbol Conditions 2SD2495 UnitUnit0.24.20.210.1c0.5VCBO 110 ICB

 8.10. Size:197K  inchange semiconductor
2sd2490.pdf

2SD2499
2SD2499

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD2490DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 200V(Min)(BR)CEOHigh DC current gain: h = 1000(Min) @I = 1AFE CLow Collector Saturation Voltgae-: V = 1.5V(Max.)@ I = 1ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio ,re

 8.11. Size:228K  inchange semiconductor
2sd2493.pdf

2SD2499
2SD2499

isc Silicon NPN Darlington Power Transistor 2SD2493DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 110V(Min)(BR)CEOHigh DC Current Gain-: h = 5000( Min.) @(I = 5A, V = 4V)FE C CELow Collector Saturation Voltage-: V = 2.5V(Max)@ (I = 5A, I = 5mA)CE(sat) C BComplement to Type 2SB1624Minimum Lot-to-Lot variations for robust device performanceand reliable op

 8.12. Size:207K  inchange semiconductor
2sd2494.pdf

2SD2499
2SD2499

isc Silicon NPN Darlington Power Transistor 2SD2494DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 110V(Min)(BR)CEOHigh DC Current Gain-: h = 5000( Min.) @(I = 5A, V = 4V)FE C CELow Collector Saturation Voltage-: V = 2.5V(Max)@ (I = 5A, I = 5mA)CE(sat) C BComplement to Type 2SB1625Minimum Lot-to-Lot variations for robust deviceperformance and reliable op

 8.13. Size:202K  inchange semiconductor
2sd2498.pdf

2SD2499
2SD2499

isc Silicon NPN Power Transistor 2SD2498DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for high resolution display,color TVHigh speed switching applicationsABSOLUTE MAXIMUM RATINGS(T =25

 8.14. Size:218K  inchange semiconductor
2sd2495.pdf

2SD2499
2SD2499

isc Silicon NPN Darlington Power Transistor 2SD2495DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 110V(Min)(BR)CEOHigh DC Current Gain-: h = 5000( Min.) @(I = 5A, V = 4V)FE C CELow Collector Saturation Voltage-: V = 2.5V(Max)@ (I = 5A, I = 5mA)CE(sat) C BComplement to Type 2SB1626Minimum Lot-to-Lot variations for robust deviceperformance and reliable op

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , TIP31 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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