A733 Todos los transistores

A733 -0.1A , -60V PNP Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Power Dissipation G H 1Emitter 1 1 1 2Collector 2 2 2 J 3Base 3 3 3 CLASSIFICATION OF hFE A D Millimeter Product-Rank A733-R A733-Q A733-P A733-K REF. B Min. Max. A 4.40 4.70 Ran

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors A733 TRANSISTOR (PNP) FEATURE TO-92 Power dissipation 1. EMITTER 2. COLLECTOR 3. BASE Equivalent Circuit A733=Device code Solid dot=Green molding compound device, A733 Z if none,the normal device Z=Rank of hFE XXX=Code 1 ORDERING INFORMATION Part Number Packa

A7 33 TRANSISTOR (PNP) SOT-23 FEATURE Collector-Base Voltage 1. BASE 2. EMITTER Complement to C945 3. COLLECTOR MAXIMUM RATINGS(TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO -60 V Collector-Base Voltage VCEO -50 V Collector-Emitter Voltage VEBO -5 V Emitter-Base Voltage IC Collector Current -Continuous -150 mA PC Collector Power Dissipat

A733 SOT-23 Transistor(PNP) 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features Collector-Base Voltage VCBO=-60V Complement to C945 MAXIMUM RATINGS(TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO -60 V Collector-Base Voltage VCEO -50 V Collector-Emitter Voltage VEBO -5 V Emitter-Base Voltage IC Collector Current

A733(PNP) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. COLLECTOR 3. BASE Features Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -100 mA PC Collector Power Dissipation 250 mW Dimensi

FM120-M WILLAS THRU A733 SOT-23 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produ Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to optimiz

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors TO-92 A733 TRANSISTOR(PNP ) 1. EMITTER FEATURE Power dissipation 2. COLLECTOR MAXIMUM RATINGS* TA=25 unless otherwise noted 3. BASE Symbol Parameter Value Units 1 2 3 -60 V VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V I

TO-92 Plastic-Encapsulate Transistors TO-92 Plastic-Encapsulate Transistors TO-92 Plastic-Encapsulate Transistors TO-92 Plastic-Encapsulate Transistors A733 A733 A733 TRANSISTOR (PNP) A733 TO-92 FEATURE FEATURE FEATURE FEATURE Power dissipation 1.EMITTER 2.COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS 3 BASE 1 2 3

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors A733 TRANSISTOR (NPN) FEATURES Complimentary to C945 MARKING CS MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Volt

A733 BIPOLAR TRANSISTOR (PNP) FEATURES Complementary to 2SC945 Excellent h Linearity FE Low Noise Surface Mount device SOT-323 MECHANICAL DATA Case SOT-323 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A Parameter Symbol Value Unit

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2PA733 PNP general purpose transistor 1999 May 28 Product specification Supersedes data of 1998 Jul 21 Philips Semiconductors Product specification PNP general purpose transistor 2PA733 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 50 V). 1 base 2 collector APPLICATIONS 3 emitter

September 2009 2SA733 PNP General Purpose Amplifier Features This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 68. TO-92 1 1. Emitter 2. Collector 3.Base Absolute Maximum Ratings* TA=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Volta

KSA733 Low Frequency Amplifier Collector-Base Voltage VCBO= -60V Complement to KSC945 Suffix -C means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage -60 V VCEO Collector-E

Low Frequency AmpIifier Collector-Base Voltage VCBO= -60V Complement to KSC945 TO-92 1. Emitter 2. Base 3. Collector PNP EpitaxiaI SiIicon Transistor AbsoIute Maximum Ratings Ta=25 C unless otherwise noted SymboI Parameter Ratings Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current

UNISONIC TECHNOLOGIES CO., LTD 2SA733 PNP SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA733 is a low frequency amplifier. FEATURES * Collector-emitter voltage BVCEO=-50V * Collector current up to -150mA * High hFE linearity * Complimentary to 2SC945 ORDERING INFORMATION Ordering Number Pin Assignment

STA733 Semiconductor Semiconductor PNP Silicon Transistor Description General small signal amplifier Features Low collector saturation voltage VCE(sat)=-0.3V(Max.) Low output capacitance Cob=4pF(Typ.) Complementary pair with STC945 Ordering Information Type NO. Marking Package Code STA733 STA733 TO-92 Outline Dimensions unit mm 3.45 0.1

2SA733 -60 V, -150mA PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES Complementary of the 2SC945 A Collector to base voltage -60V L 3 3 MARKING Top View C B 1 1 2 Product Marking Code 2 K E 2SA733 CS D H J F G CLASSIFICATION OF hFE Product-Rank 2SA73

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-92 Plastic Package CSA733 PNP SILICON PLANAR EPITAXIAL TRANSISTOR Low Frequency Amplifier Complementary to CSC945 DIM MIN MAX A 4,32 5,33 B 4,45 5,20 C 3,18 4,19 D 0,41 0,55 E 0,35 0,50 F 5 DEG G 1,14 1,40 H 1,14 1,53 K 12,70 L 1.982 2.082 ALL DIMENSIONS IN M.M. 1 2 3 1 = EMITTE

SEMICONDUCTOR KTA733 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES Excellent hFE Linearity. hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) N DIM MILLIMETERS Low Noise NF=1dB(Typ.). at f=1kHz A 4.70 MAX E K B 4.80 MAX Complementary to KTC945. G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 _ MAXIMUM RATING (Ta=2

SEMICONDUCTOR KTA733B TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES Excellent hFE Linearity. hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) N DIM MILLIMETERS Low Noise NF=1dB(Typ.). at f=1kHz A 4.70 MAX E K B 4.80 MAX Complementary to KTC945B. G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 _ MAXIMUM RATING (Ta

A733LT1 COLLECTOR General Purpose Transistor 3 PNP Silicon 1 BASE 2 SOT-23 EMITTER (Ta=25 C) MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage V CEO -50 Vdc Collector-Base Voltage VCBO -60 Vdc Emitter-Base Voltage VEBO -5.0 Vdc Collector Current -Continuous IC mAdc -150 THERMAL CHARACTERISTICS Characteristics Symbol Value Unit (1) Total Device Dissipa

Spec. No. HE6507 HI-SINCERITY Issued Date 1992.12.16 Revised Date 2006.07.28 MICROELECTRONICS CORP. Page No. 1/5 HSA733 PNP Epitaxial Planar Transistor Description The HSA733 is designed for use in driver stage of AF amplifier applications. TO-92 Absolute Maximum Ratings Maximum Temperatures Storage Temperature............................................................

Spec. No. C306A3 Issued Date 2003.07.14 CYStech Electronics Corp. Revised Date 2013.09.23 Page No. 1 / 7 General Purpose PNP Epitaxial Planar Transistor BTA733A3 Description The BTA733A3 is designed for use in driver stage of AF amplifier and general purpose amplification. High HFE and excellent linearity Complementary to BTC945A3. Pb-free package

2SA733M(BR3CG733M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features h FE High hFE and excellent hFE linearity. / Applications Driver stage of AF power amplifier. / Equivalent Circ

MMBTSA733 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups R, O, Y, P and L, according to its DC current gain. As complementary type the NPN transistor MMBTSC945 is recommended. TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO

2SA733 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups, R, O, Y, P and L, according to its DC current gain. As complementary type the NPN transistor 2SC945 is recommended. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Collector 3. Base

SEMICONDUCTOR 2SA733LT1 Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR Package SOT-23 * Collector Current Ic=150mA ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating Unit Collector-Base Voltage Vcbo -60 V Collector-Emitter Voltage Vceo -50 V Emitter-Base Voltage Vebo -5 V PIN 1 2 3 Collector Current Ic -150

SEMICONDUCTOR FTA733B TECHNICAL DATA PNP TRANSISTOR B C FEATURE Excellent hFE linearity Low noise DIM MILLIMETERS Complementary to FTC945B A 4.70 MAX E B 4.80 MAX G C 3.70 MAX D MAXIMUM RATINGS (TA=25 unless otherwise noted) D 0.55 MAX E 1.00 F 1.27 Symbol Parameter Value Units G 0.85 H 0.45 VCBO Collector-Base Voltage -60 V _ H J 14.00 + 0.50 L 2.30 F

SMD Type Trans s o s SMD Type Transiisttorrs PNP Transistors 2SA733 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector-Base Voltage VCBO=-60V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO -60 V Collector to emitter voltage VCEO -50 V

Product specification Silicon Epitaxial Planar Transistor 2SA733 FEATURES Pb Excellent h Linearity. FE Lead-free Power dissipation P =250mW. D High h . FE APPLICATIONS Designed for use in driver stage of amplifier. SOT-23 ORDERING INFORMATION Type No. Marking Package Code 2SA733 CS SOT-23 none is for Lead Free package; G is f

2SA733(3CG733) PNP /SILICON PNP TRANSISTOR /Purpose Driver stage of AF power amplifier. h /Features High h and excellent h linearity. FE FE FE /Absolute Maximum Ratings(Ta=25 ) Symbol Rating Unit V -60 V CBO V -50 V CEO V -5.0 V EBO I -150 mA

www.msksemi.com A733-MS Semiconductor Compiance Semiconductor Compiance TRANSISTOR (PNP) FEATURE 1. BASE Collector-Base Voltage 2. EMITTER Complement to SOT 23 3. COLLECTOR C945-MS MARKING CS MAXIMUM RATINGS(Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO -60 V Collector-Base Voltage VCEO -50 V Collector-Emitter Voltage VEBO -5 V Emitter