A733. Аналоги и основные параметры
Наименование производителя: A733
Маркировка: CS
Тип материала: Si
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.15 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 50 MHz
Ёмкость коллекторного перехода (Cc): 4.5 pf
Статический коэффициент передачи тока (hFE): 120
Корпус транзистора: TO92
SOT23
Аналоги (замена) для A733
- подборⓘ биполярного транзистора по параметрам
A733 даташит
..1. Size:362K secos
a733.pdf 
A733 -0.1A , -60V PNP Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Power Dissipation G H 1Emitter 1 1 1 2Collector 2 2 2 J 3Base 3 3 3 CLASSIFICATION OF hFE A D Millimeter Product-Rank A733-R A733-Q A733-P A733-K REF. B Min. Max. A 4.40 4.70 Ran
..2. Size:752K jiangsu
a733.pdf 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors A733 TRANSISTOR (PNP) FEATURE TO-92 Power dissipation 1. EMITTER 2. COLLECTOR 3. BASE Equivalent Circuit A733=Device code Solid dot=Green molding compound device, A733 Z if none,the normal device Z=Rank of hFE XXX=Code 1 ORDERING INFORMATION Part Number Packa
..3. Size:559K htsemi
a733.pdf 
A7 33 TRANSISTOR (PNP) SOT-23 FEATURE Collector-Base Voltage 1. BASE 2. EMITTER Complement to C945 3. COLLECTOR MAXIMUM RATINGS(TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO -60 V Collector-Base Voltage VCEO -50 V Collector-Emitter Voltage VEBO -5 V Emitter-Base Voltage IC Collector Current -Continuous -150 mA PC Collector Power Dissipat
..5. Size:180K lge
a733 sot-23.pdf 
A733 SOT-23 Transistor(PNP) 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features Collector-Base Voltage VCBO=-60V Complement to C945 MAXIMUM RATINGS(TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO -60 V Collector-Base Voltage VCEO -50 V Collector-Emitter Voltage VEBO -5 V Emitter-Base Voltage IC Collector Current
..6. Size:208K lge
a733 to-92.pdf 
A733(PNP) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. COLLECTOR 3. BASE Features Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -100 mA PC Collector Power Dissipation 250 mW Dimensi
..7. Size:428K willas
a733.pdf 
FM120-M WILLAS THRU A733 SOT-23 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produ Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to optimiz
..8. Size:703K shenzhen
a733.pdf 
Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors TO-92 A733 TRANSISTOR(PNP ) 1. EMITTER FEATURE Power dissipation 2. COLLECTOR MAXIMUM RATINGS* TA=25 unless otherwise noted 3. BASE Symbol Parameter Value Units 1 2 3 -60 V VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V I
..9. Size:305K can-sheng
a733.pdf 
TO-92 Plastic-Encapsulate Transistors TO-92 Plastic-Encapsulate Transistors TO-92 Plastic-Encapsulate Transistors TO-92 Plastic-Encapsulate Transistors A733 A733 A733 TRANSISTOR (PNP) A733 TO-92 FEATURE FEATURE FEATURE FEATURE Power dissipation 1.EMITTER 2.COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS 3 BASE 1 2 3
..10. Size:301K can-sheng
a733 sot-23.pdf 
ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors A733 TRANSISTOR (NPN) FEATURES Complimentary to C945 MARKING CS MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Volt
..12. Size:720K cn hottech
a733.pdf 
A733 BIPOLAR TRANSISTOR (PNP) FEATURES Complementary to 2SC945 Excellent h Linearity FE Low Noise Surface Mount device SOT-323 MECHANICAL DATA Case SOT-323 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A Parameter Symbol Value Unit
0.1. Size:47K philips
2pa733 4.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2PA733 PNP general purpose transistor 1999 May 28 Product specification Supersedes data of 1998 Jul 21 Philips Semiconductors Product specification PNP general purpose transistor 2PA733 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 50 V). 1 base 2 collector APPLICATIONS 3 emitter
0.2. Size:123K fairchild semi
2sa733.pdf 
September 2009 2SA733 PNP General Purpose Amplifier Features This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 68. TO-92 1 1. Emitter 2. Collector 3.Base Absolute Maximum Ratings* TA=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Volta
0.3. Size:41K fairchild semi
ksa733.pdf 
KSA733 Low Frequency Amplifier Collector-Base Voltage VCBO= -60V Complement to KSC945 Suffix -C means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage -60 V VCEO Collector-E
0.5. Size:125K samsung
ksa733.pdf 
Low Frequency AmpIifier Collector-Base Voltage VCBO= -60V Complement to KSC945 TO-92 1. Emitter 2. Base 3. Collector PNP EpitaxiaI SiIicon Transistor AbsoIute Maximum Ratings Ta=25 C unless otherwise noted SymboI Parameter Ratings Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current
0.6. Size:259K utc
2sa733.pdf 
UNISONIC TECHNOLOGIES CO., LTD 2SA733 PNP SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA733 is a low frequency amplifier. FEATURES * Collector-emitter voltage BVCEO=-50V * Collector current up to -150mA * High hFE linearity * Complimentary to 2SC945 ORDERING INFORMATION Ordering Number Pin Assignment
0.7. Size:189K auk
sta733.pdf 
STA733 Semiconductor Semiconductor PNP Silicon Transistor Description General small signal amplifier Features Low collector saturation voltage VCE(sat)=-0.3V(Max.) Low output capacitance Cob=4pF(Typ.) Complementary pair with STC945 Ordering Information Type NO. Marking Package Code STA733 STA733 TO-92 Outline Dimensions unit mm 3.45 0.1
0.8. Size:414K secos
2sa733.pdf 
2SA733 -60 V, -150mA PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES Complementary of the 2SC945 A Collector to base voltage -60V L 3 3 MARKING Top View C B 1 1 2 Product Marking Code 2 K E 2SA733 CS D H J F G CLASSIFICATION OF hFE Product-Rank 2SA73
0.9. Size:222K cdil
csa733.pdf 
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-92 Plastic Package CSA733 PNP SILICON PLANAR EPITAXIAL TRANSISTOR Low Frequency Amplifier Complementary to CSC945 DIM MIN MAX A 4,32 5,33 B 4,45 5,20 C 3,18 4,19 D 0,41 0,55 E 0,35 0,50 F 5 DEG G 1,14 1,40 H 1,14 1,53 K 12,70 L 1.982 2.082 ALL DIMENSIONS IN M.M. 1 2 3 1 = EMITTE
0.10. Size:43K kec
kta733.pdf 
SEMICONDUCTOR KTA733 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES Excellent hFE Linearity. hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) N DIM MILLIMETERS Low Noise NF=1dB(Typ.). at f=1kHz A 4.70 MAX E K B 4.80 MAX Complementary to KTC945. G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 _ MAXIMUM RATING (Ta=2
0.11. Size:270K kec
kta733b.pdf 
SEMICONDUCTOR KTA733B TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES Excellent hFE Linearity. hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) N DIM MILLIMETERS Low Noise NF=1dB(Typ.). at f=1kHz A 4.70 MAX E K B 4.80 MAX Complementary to KTC945B. G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 _ MAXIMUM RATING (Ta
0.12. Size:1860K wietron
a733lt1.pdf 
A733LT1 COLLECTOR General Purpose Transistor 3 PNP Silicon 1 BASE 2 SOT-23 EMITTER (Ta=25 C) MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage V CEO -50 Vdc Collector-Base Voltage VCBO -60 Vdc Emitter-Base Voltage VEBO -5.0 Vdc Collector Current -Continuous IC mAdc -150 THERMAL CHARACTERISTICS Characteristics Symbol Value Unit (1) Total Device Dissipa
0.13. Size:50K hsmc
hsa733.pdf 
Spec. No. HE6507 HI-SINCERITY Issued Date 1992.12.16 Revised Date 2006.07.28 MICROELECTRONICS CORP. Page No. 1/5 HSA733 PNP Epitaxial Planar Transistor Description The HSA733 is designed for use in driver stage of AF amplifier applications. TO-92 Absolute Maximum Ratings Maximum Temperatures Storage Temperature............................................................
0.14. Size:257K cystek
bta733a3.pdf 
Spec. No. C306A3 Issued Date 2003.07.14 CYStech Electronics Corp. Revised Date 2013.09.23 Page No. 1 / 7 General Purpose PNP Epitaxial Planar Transistor BTA733A3 Description The BTA733A3 is designed for use in driver stage of AF amplifier and general purpose amplification. High HFE and excellent linearity Complementary to BTC945A3. Pb-free package
0.16. Size:506K blue-rocket-elect
2sa733m.pdf 
2SA733M(BR3CG733M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features h FE High hFE and excellent hFE linearity. / Applications Driver stage of AF power amplifier. / Equivalent Circ
0.17. Size:149K semtech
mmbtsa733r mmbtsa733o mmbtsa733y mmbtsa733p mmbtsa733l.pdf 
MMBTSA733 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups R, O, Y, P and L, according to its DC current gain. As complementary type the NPN transistor MMBTSC945 is recommended. TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO
0.18. Size:162K semtech
2sa733r 2sa733o 2sa733y 2sa733p 2sa733l.pdf 
2SA733 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups, R, O, Y, P and L, according to its DC current gain. As complementary type the NPN transistor 2SC945 is recommended. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Collector 3. Base
0.19. Size:706K china
2sa733lt1.pdf 
SEMICONDUCTOR 2SA733LT1 Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR Package SOT-23 * Collector Current Ic=150mA ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating Unit Collector-Base Voltage Vcbo -60 V Collector-Emitter Voltage Vceo -50 V Emitter-Base Voltage Vebo -5 V PIN 1 2 3 Collector Current Ic -150
0.20. Size:350K first silicon
fta733b.pdf 
SEMICONDUCTOR FTA733B TECHNICAL DATA PNP TRANSISTOR B C FEATURE Excellent hFE linearity Low noise DIM MILLIMETERS Complementary to FTC945B A 4.70 MAX E B 4.80 MAX G C 3.70 MAX D MAXIMUM RATINGS (TA=25 unless otherwise noted) D 0.55 MAX E 1.00 F 1.27 Symbol Parameter Value Units G 0.85 H 0.45 VCBO Collector-Base Voltage -60 V _ H J 14.00 + 0.50 L 2.30 F
0.21. Size:1105K kexin
2sa733.pdf 
SMD Type Trans s o s SMD Type Transiisttorrs PNP Transistors 2SA733 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector-Base Voltage VCBO=-60V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO -60 V Collector to emitter voltage VCEO -50 V
0.22. Size:309K galaxy
2sa733.pdf 
Product specification Silicon Epitaxial Planar Transistor 2SA733 FEATURES Pb Excellent h Linearity. FE Lead-free Power dissipation P =250mW. D High h . FE APPLICATIONS Designed for use in driver stage of amplifier. SOT-23 ORDERING INFORMATION Type No. Marking Package Code 2SA733 CS SOT-23 none is for Lead Free package; G is f
0.23. Size:258K lzg
2sa733k-p-q-r.pdf 
2SA733(3CG733) PNP /SILICON PNP TRANSISTOR /Purpose Driver stage of AF power amplifier. h /Features High h and excellent h linearity. FE FE FE /Absolute Maximum Ratings(Ta=25 ) Symbol Rating Unit V -60 V CBO V -50 V CEO V -5.0 V EBO I -150 mA
0.24. Size:3984K msksemi
a733-ms.pdf 
www.msksemi.com A733-MS Semiconductor Compiance Semiconductor Compiance TRANSISTOR (PNP) FEATURE 1. BASE Collector-Base Voltage 2. EMITTER Complement to SOT 23 3. COLLECTOR C945-MS MARKING CS MAXIMUM RATINGS(Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO -60 V Collector-Base Voltage VCEO -50 V Collector-Emitter Voltage VEBO -5 V Emitter
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