A733 Datasheet and Replacement

A733 -0.1A , -60V PNP Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Power Dissipation G H1Emitter 1112Collector 222J3Base 333CLASSIFICATION OF hFE A DMillimeter Product-Rank A733-R A733-Q A733-P A733-K REF. BMin. Max. A 4.40 4.70 Ran

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors A733 TRANSISTOR (PNP)FEATURE TO-92 Power dissipation 1. EMITTER2. COLLECTOR3. BASE Equivalent Circuit A733=Device code Solid dot=Green molding compound device, A733 Z if none,the normal deviceZ=Rank of hFE XXX=Code1ORDERING INFORMATION Part Number Packa

A7 33TRANSISTOR (PNP) SOT-23 FEATURE Collector-Base Voltage 1. BASE 2. EMITTER Complement to C945 3. COLLECTOR MAXIMUM RATINGS(TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO -60 VCollector-Base Voltage VCEO -50 VCollector-Emitter Voltage VEBO -5 VEmitter-Base Voltage IC Collector Current -Continuous -150 mA PC Collector Power Dissipat

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GMA733MAXIMUM RATINGS (Ta=25 )MAXIMUM RATINGS (Ta=25 )MAXIMUM RATINGS (Ta=25 ) MAXIMUM RATINGS (Ta=25)CHARACTERISTIC Symbol Rating Unit

A733 SOT-23 Transistor(PNP)1. BASE SOT-232. EMITTER 3. COLLECTOR Features Collector-Base Voltage: VCBO=-60V Complement to C945 MAXIMUM RATINGS(TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO -60 VCollector-Base Voltage VCEO -50 VCollector-Emitter Voltage VEBO -5 VEmitter-Base Voltage IC Collector Current

A733(PNP)TO-92 Bipolar Transistors 1. EMITTER TO-92 2. COLLECTOR 3. BASE Features Power dissipationMAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -60 VVCEO Collector-Emitter Voltage -50 VVEBO Emitter-Base Voltage -5 VIC Collector Current -Continuous -100 mA PC Collector Power Dissipation 250 mW Dimensi

FM120-MWILLASTHRUA733SOT-23 Plastic-Encapsulate Transistors FM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProduPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to optimiz

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors TO-92 A733 TRANSISTOR(PNP ) 1. EMITTER FEATURE Power dissipation 2. COLLECTOR MAXIMUM RATINGS* TA=25 unless otherwise noted 3. BASE Symbol Parameter Value Units 1 2 3 -60 VVCBO Collector-Base Voltage VCEO Collector-Emitter Voltage -50 VVEBO Emitter-Base Voltage -5 VI

TO-92 Plastic-Encapsulate TransistorsTO-92 Plastic-Encapsulate TransistorsTO-92 Plastic-Encapsulate TransistorsTO-92 Plastic-Encapsulate TransistorsA733A733A733 TRANSISTOR (PNP)A733TO-92FEATUREFEATUREFEATUREFEATUREPower dissipation 1.EMITTER2.COLLECTORMAXIMUM RATINGS (TA=25 unless otherwise noted)MAXIMUM RATINGSMAXIMUM RATINGSMAXIMUM RATINGS3 BASE1 2 3

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors A733 TRANSISTOR (NPN) FEATURES Complimentary to C945 MARKING:CS MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Volt

A733BIPOLAR TRANSISTOR (PNP)FEATURES Complementary to 2SC945 Excellent h LinearityFE Low Noise Surface Mount deviceSOT-323MECHANICAL DATA Case: SOT-323 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless otherwise noted)AParameter Symbol Value Unit

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1862PA733PNP general purpose transistor1999 May 28Product specificationSupersedes data of 1998 Jul 21Philips Semiconductors Product specificationPNP general purpose transistor 2PA733FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 50 V).1 base2 collectorAPPLICATIONS3 emitter

September 20092SA733PNP General Purpose AmplifierFeatures This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 68.TO-9211. Emitter 2. Collector 3.BaseAbsolute Maximum Ratings* TA=25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage -60 VVCEO Collector-Emitter Volta

KSA733Low Frequency Amplifier Collector-Base Voltage : VCBO= -60V Complement to KSC945 Suffix -C means Center Collector (1. Emitter 2. Collector 3. Base)TO-9211. Emitter 2. Base 3. CollectorPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage -60 VVCEO Collector-E

Low Frequency AmpIifier Collector-Base Voltage : VCBO= -60V Complement to KSC945TO-92 1. Emitter 2. Base 3. CollectorPNP EpitaxiaI SiIicon TransistorAbsoIute Maximum Ratings Ta=25C unless otherwise noted SymboI Parameter Ratings UnitsVCBO Collector-Base Voltage -60 VVCEO Collector-Emitter Voltage -50 VVEBO Emitter-Base Voltage -5 VIC Collector Current

UNISONIC TECHNOLOGIES CO., LTD 2SA733 PNP SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA733 is a low frequency amplifier. FEATURES * Collector-emitter voltage: BVCEO=-50V * Collector current up to -150mA * High hFE linearity * Complimentary to 2SC945 ORDERING INFORMATION Ordering Number Pin Assignment

STA733Semiconductor Semiconductor PNP Silicon TransistorDescription General small signal amplifier Features Low collector saturation voltage : VCE(sat)=-0.3V(Max.) Low output capacitance : Cob=4pF(Typ.) Complementary pair with STC945 Ordering Information Type NO. Marking Package Code STA733 STA733 TO-92 Outline Dimensions unit : mm 3.450.1

2SA733 -60 V, -150mA PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES Complementary of the 2SC945 A Collector to base voltage: -60V L33MARKING Top View C B11 2Product Marking Code 2K E2SA733 CS DH JF GCLASSIFICATION OF hFE Product-Rank 2SA73

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyTO-92 Plastic PackageCSA733PNP SILICON PLANAR EPITAXIAL TRANSISTORLow Frequency AmplifierComplementary to CSC945DIM MIN MAXA 4,32 5,33B 4,45 5,20C 3,18 4,19D 0,41 0,55E 0,35 0,50F 5 DEGG 1,14 1,40H 1,14 1,53K 12,70 L 1.982 2.082ALL DIMENSIONS IN M.M.1 2 31 = EMITTE

SEMICONDUCTOR KTA733TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.B CFEATURESExcellent hFE Linearity.: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.)N DIM MILLIMETERSLow Noise : NF=1dB(Typ.). at f=1kHzA 4.70 MAXEKB 4.80 MAXComplementary to KTC945. GC 3.70 MAXDD 0.45E 1.00F 1.27G 0.85H 0.45_MAXIMUM RATING (Ta=2

SEMICONDUCTOR KTA733BTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.B CFEATURESExcellent hFE Linearity.: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.)N DIM MILLIMETERSLow Noise : NF=1dB(Typ.). at f=1kHzA 4.70 MAXEKB 4.80 MAXComplementary to KTC945B. GC 3.70 MAXDD 0.45E 1.00F 1.27G 0.85H 0.45_MAXIMUM RATING (Ta

A733LT1COLLECTORGeneral Purpose Transistor3PNP Silicon1BASE2SOT-23EMITTER(Ta=25 C)MAXIMUM RATINGSRating Symbol ValueUnitCollector-Emitter Voltage VCEO -50 VdcCollector-Base Voltage VCBO-60 VdcEmitter-Base Voltage VEBO-5.0 VdcCollector Current -Continuous ICmAdc-150THERMAL CHARACTERISTICSCharacteristics Symbol ValueUnit(1)Total Device Dissipa

Spec. No. : HE6507HI-SINCERITYIssued Date : 1992.12.16Revised Date : 2006.07.28MICROELECTRONICS CORP.Page No. : 1/5HSA733PNP Epitaxial Planar TransistorDescriptionThe HSA733 is designed for use in driver stage of AF amplifier applications.TO-92Absolute Maximum Ratings Maximum TemperaturesStorage Temperature............................................................

Spec. No. : C306A3 Issued Date : 2003.07.14 CYStech Electronics Corp.Revised Date : 2013.09.23 Page No. : 1 / 7 General Purpose PNP Epitaxial Planar Transistor BTA733A3Description The BTA733A3 is designed for use in driver stage of AF amplifier and general purpose amplification. High HFE and excellent linearity Complementary to BTC945A3. Pb-free package

2SA733 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 PNP Silicon PNP transistor in a TO-92 Plastic Package. / Features h FE High hFE and excellent hFE linearity. / Applications Driver stage of AF power amplifier. / Equivalent Circuit

2SA733M(BR3CG733M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features h FEHigh hFE and excellent hFE linearity. / Applications Driver stage of AF power amplifier. / Equivalent Circ

MMBTSA733 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups R, O, Y, P and L, according to its DC current gain. As complementary type the NPN transistor MMBTSC945 is recommended. TO-236 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage -VCBO

2SA733 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups, R, O, Y, P and L, according to its DC current gain. As complementary type the NPN transistor 2SC945 is recommended. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Collector 3. Base

SEMICONDUCTOR 2SA733LT1 Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR Package:SOT-23 * Collector Current : Ic=150mA ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating UnitCollector-Base Voltage Vcbo -60 V Collector-Emitter Voltage Vceo -50 V Emitter-Base Voltage Vebo -5 V PIN: 1 2 3Collector Current Ic -150

SEMICONDUCTORFTA733BTECHNICAL DATAPNP TRANSISTOR B CFEATURE Excellent hFE linearity Low noise DIM MILLIMETERS Complementary to FTC945BA 4.70 MAXEB 4.80 MAXGC 3.70 MAXDMAXIMUM RATINGS (TA=25 unless otherwise noted) D 0.55 MAXE 1.00F 1.27Symbol Parameter Value Units G 0.85H 0.45VCBO Collector-Base Voltage -60 V _HJ 14.00 + 0.50L 2.30F

SMD Type Trans s o sSMD Type TransiisttorrsPNP Transistors2SA733SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13FeaturesCollector-Base Voltage: VCBO=-60V1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector to base voltage VCBO -60 VCollector to emitter voltage VCEO -50 V

Product specification Silicon Epitaxial Planar Transistor 2SA733 FEATURES Pb Excellent h Linearity. FELead-free Power dissipationP =250mW. D High h . FEAPPLICATIONS Designed for use in driver stage of amplifier. SOT-23 ORDERING INFORMATION Type No. Marking Package Code 2SA733 CS SOT-23 : none is for Lead Free package; G is f

2SA733(3CG733) PNP /SILICON PNP TRANSISTOR :/Purpose: Driver stage of AF power amplifier. :h /Features: High h and excellent h linearity. FEFE FE /Absolute Maximum Ratings(Ta=25) Symbol Rating Unit V -60 V CBO V -50 V CEO V -5.0 V EBO I -150 mA

www.msksemi.comA733-MSSemiconductor CompianceSemiconductor Compiance TRANSISTOR (PNP) FEATURE 1. BASE Collector-Base Voltage 2. EMITTER Complement to SOT23 3. COLLECTORC945-MS MARKING :CSMAXIMUM RATINGS(Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO -60 VCollector-Base Voltage VCEO -50 VCollector-Emitter Voltage VEBO -5 VEmitter