C945 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

C945 60V, 0.15A, 200mW NPN Plastic Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES Excellent hFE Linearity AL Low noise 33 Complementary to A733 Top View C B11 22MARKING K EProduct Marking CodeDC945 CRH JF GMillimeter MillimeterREF. REF. PACK

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 C945 TRANSISTOR (NPN) FEATURE 1. BASE Excellent hFE Linearity2. EMITTER Low noise 3. COLLECTOR Complementary to A733 MARKING:CR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 60 VVCEO Collector-Emitt

C945 TRANSISTOR (NPN) SOT-23 FEATURE Excellent hFE Linearity Low noise 1. BASE 2. EMITTER Complementary to A733 3. COLLECTOR MARKING:CR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 50 VVEBO Emitter-Base Voltage 5 VIC Collector Current -Continuous 150 mA PC C

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GMC945MAXIMUM RATINGS (Ta=25 )MAXIMUM RATINGS (Ta=25) MAXIMUM RATINGS (Ta=25 )CHARACTERISTIC Symbol Rating Unit Collector-Base VoltageVCBO 60 Vdc

C945 SOT-23 Transistor(NPN)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features Excellent hFE Linearity: hFE(IC=0.1mA) hFE(IC=2mA)=0.95(Typ.) Low noise Complementary to A733 MARKING:CR Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltag

C945(NPN) TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Excellent hFE linearity Low noise Complementary to A733 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 50 VDimensions in inches and (millimeters)VEBO Emitter-Base Voltage 5 VIC Colle

C945NPN TransistorsTO-92P b Lead(Pb)-Free1. EMITTER122. COLLECTOR33. BASE0.4Junction Temperature Tj +150 CStorage Temperature T -40 to + 150 CSTGWEITRON1/4 08-Feb-06http://www.weitron.com.twC945ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)Characteristics Symbol Min Typ Max UnitON CHARACTERISTICSDC Current GainhFE1VCE=

FM120-M WILLASTHRUC945 SOT-23 Plastic-Encapsulate Transistors FM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProducPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order toTRANSI

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors TO-92 C945 TRANSISTOR (NPN ) 1.EMITTER FEATURE Excellent hFE linearity 2.COLLECTOR Low noise 3. BASE Complementary to A733 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1 2 3 Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Volt

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors C945 TRANSISTOR (NPN) FEATURES Complimentary to A733 MARKING:CR. MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Vol

TO-92 Plastic-Encapsulate TransistorsFEATURETO-92 Excellent hFE linearity Low noise1.EMITTER Complementary to A7332.BASEMAXIMUM RATINGSMAXIMUM RATINGSMAXIMUM RATINGS (TA=25 unless otherwise noted)MAXIMUM RATINGS3.COLLECTORSymbol Parameter Value UnitsSymbol Parameter Value UnitsSymbol Parameter Value UnitsSymbol Parameter Value Units1 2 3VCBO 60 V

C945 TRANSISTOR NPN TRANSISTOR NPNFEATURE SOT-23 Excellent hFE Linearity Low noise 1. BASE Complementary to A733 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 60 V CBOV Collector-Emitter Voltage 50 V CEOV Emitter-Base Voltage 5 V EBOI Collector Current 150 mA CP Collector

SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 C945 TRANSISTOR (NPN ) 1.EMITTER FEATURE Excellent hFE linearity 2.COLLECTOR Low noise 3. BASE Complementary to A733 MAXIMUM RATINGS (TA=25 unless otherwise noted) 1 2 3 Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltag

C945Silicon Epitaxial Planar TransistorFEATURES High voltage and high current. Excellent h linearity. FE Low noise. APPLICATIONS Audio frequency amplifier. SOT-23 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value Units Collector-Base Voltage V 60 V CBO Collector-Emitter Voltage V 50 V CEO Emitter-Base Voltage V 5 V

C945C945C945C945C9 45 TRANSISTOR(NPN)FEATURE SOT-23 Excellent hFE Linearity Low noise 1BASE Complementary to A733 2EMITTER 3COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO 60 VCollector-Base VoltageVCEO 50 VCollector-Emitter VoltageVEBO 5 VEmitter-Base VoltageIC Collector Current -Cont

C945 TRANSISTOR (NPN) SOT-23 FEATURE Excellent hFE Linearity Low noise 1BASE 2EMITTER Complementary to A733 3COLLECTOR MARKING: CR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO 60 V Collector-Base VoltageVCEO 50 V Collector-Emitter Voltage VEBO 5 V Emitter-Base VoltageIC Collector Current -Continuous 150 mA PC C

1ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTDC945MAXIMUM RATINGS (T =25) aCHARACTERISTIC Symbol Rating Unit Collector-Base VoltageV 60 VdcCBO-Collector-Emitter VoltageV 50 VdcCEO-Emitter-Base VoltageV 5.0 VdcEBO

C945BIPOLAR TRANSISTOR (NPN)FEATURES Complementary to A733 Excellent h LinearityFE Low Noise Surface Mount deviceSOT-23MECHANICAL DATA Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless otherwise noted)AParameter Symbol Value UnitCol

Features A SOT-23CDim Min MaxA0.37 0.51B CB1.20 1.40TOP VIEWB ECD 2.30 2.50EGD0.89 1.03E0.45 0.60HG1.78 2.05KH2.80 3.00JJ0.013 0.10Maximum Ratings @ T = 25C unless otherwise specifiedA K0.903 1.10Pa

DISCRETE SEMICONDUCTORSDATA SHEETndbook, halfpageM3D1862PC945NPN general purpose transistor1999 May 28Product specificationSupersedes data of 1997 Mar 26Philips Semiconductors Product specificationNPN general purpose transistor 2PC945FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 50 V).1 base2 collectorAPPLICATIONS3 emitter

KSC945Audio Frequency Amplifier & High Frequency OSC. Complement to KSA733 Collector-Base Voltage : VCBO=60V High Current Gain Bandwidth Product : fT=300MHz (TYP) Suffix -C means Center Collector (1. Emitter 2. Collector 3. Base)TO-9211. Emitter 2. Base 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted

Audio Frequency AmpIifier & High Frequency OSC. Complement to KSA733 Collector-Base Voltage : VCBO=60V High Current Gain Bandwidth Product : fT=300MHz (TYP.)TO-92 1. Emitter 2. Base 3. CollectorNPN EpitaxiaI SiIicon TransistorAbsoIute Maximum Ratings Ta=25C unless otherwise noted SymboI Parameter VaIue UnitsVCBO Collector-Base Voltage 60 VVCEO Coll

MCC2SC945-YMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components2SC945-GRCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Capable of 0.4Watts of Power Dissipation. NPN Silicon Collector-current 0.15APlastic-Encapsulate Collector-base Voltage 60V Operating and storage junction temperature range: -55OC to +150OC

MCC2SC945-YMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components2SC945-GRCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Capable of 0.4Watts of Power Dissipation. NPN Silicon Collector-current 0.15APlastic-Encapsulate Collector-base Voltage 60V Operating and storage junction temperature range: -55OC to +150OC

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

UNISONIC TECHNOLOGIES CO., LTD 2SC945 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR DESCRIPTION The UTC 2SC945 is an audio frequency amplifier high frequency OSC NPN transistor. FEATURES * Collector-Emitter voltage: BVCBO=50V * Collector current up to 150mA * High hFE linearity * Complimentary to UTC 2SA733 ORDERING I

UTC KSC945 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR DESCRIPTION The UTC KSC945 is an audio frequency amplifier high frequency OSC NPN transistor. 1FEATURES *Collector-Base voltage: BVCBO=60V TO-92*Collector current up to 150mA *High hFE linearity *Complimentary to KSA733 1:EMITTER 2: BASE 3: COLLECTOR ABSOLUT

STC945NPN Silicon TransistorDescription PIN Connection General small signal amplifier CFeatures B Low collector saturation voltage : VCE(sat)=0.25V(Max.) Low output capacitance : Cob=2pF(Typ.) E Complementary pair with STA733 TO-92 Ordering Information Type NO. Marking Package Code STC945 STC945 TO-92 Absolute maximum ratings (Ta=25C) C

ST 2SC945 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups, R, O, Y, P and L, according to its DC current gain. As complementary type the PNP transistor ST 2SA733 is recommended. On special request, these transistors can be 1. Emitter 2. Collector 3. Base manufactured in different pin configurati

C945TNPN SiliconElektronische BauelementePlastic-Encapsulate TransistorRoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeFEATURES Low noise TO-92Excellent hFE linearity Complementary to A733TMAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Symbol Value UnitsCollector-Base Voltage VCBO 60 V 1Collector-Emitter Voltage VCEO 50 V23

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTOR CSC945CC8050TO-92Plastic PackageBCEAudio Frequency General Purpose and Driver Stage Amplifier ApplicationComplmentary CSA733ABSOLUTE MAXIMUM RATINGS (Ta=25C)DESCRIPTION SYMBOL VALUE UNITSVCBOCollector Base Voltage 60 VVCEOCollector Em

SEMICONDUCTOR KTC945BTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.B CFEATURESExcellent hFE Linearity.: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.)N DIM MILLIMETERSLow Noise : NF=1dB(Typ.). at f=1kHzA 4.70 MAXEKB 4.80 MAXComplementary to KTA733B(O, Y, GR class). GC 3.70 MAXDD 0.45E 1.00F 1.27G 0.85H 0.45_MA

SEMICONDUCTOR KTC945TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.B CFEATURESExcellent hFE Linearity.: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.)N DIM MILLIMETERSLow Noise : NF=1dB(Typ.). at f=1kHzA 4.70 MAXEKB 4.80 MAXComplementary to KTA733. GC 3.70 MAXDD 0.45E 1.00F 1.27G 0.85H 0.45_MAXIMUM RATING (Ta=2

C945LT1NPN Transistors3P b Lead(Pb)-Free12C945LT1=CRWEITRONhttp://www.weitron.com.twC945LT1ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)CharacteristicsSymbol Min Typ Max UnitON CHARACTERISTICSDC Current GainhFE --130400(IC=1 mAdc, VCE=6.0 Vdc)Collector-Emitter Saturation VoltageVCE(sat) - Vdc- 0.3 (IC=100 mAdc, IB=10mAdc)

Spec. No. : HE6517HI-SINCERITYIssued Date : 1995.02.11Revised Date : 2004.08.09MICROELECTRONICS CORP.Page No. : 1/5HSC945NPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HSC945 is designed for using driver stage of AP amplifier and low speedswitching applications.TO-92Absolute Maximum Ratings Maximum TemperaturesStorage Temperature ...................................

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC945 TRANSISTOR (NPN) FEATURE 1. BASE Excellent hFE Linearity2. EMITTER Low noise 3. COLLECTOR Complementary to A733 MARKING:CR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emi

Spec. No. : C204A3 Issued Date : 2003.04.01 CYStech Electronics Corp.Revised Date : 2014.06.10 Page No. : 1 / 7 General Purpose NPN Epitaxial Planar Transistor BTC945A3Description The BTC945A3 is designed for use in driver stage of AF amplifier and low speed switching. Complementary to BTA733A3. Pb-free package Symbol Outline BTC945A3 TO-92 BBase C

2SC945M Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features ,High voltage, excellent hFE linearity. / Applications General power amplifier application and low speed switching.

2SC945 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features ,h FE High voltage, excellent hFE linearity. / Applications AF amplifier and low speed switching applications. / Eq

2SC945 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups, R, O, Y, P and L, according to its DC current gain. As complementary type the PNP transistor 2SA733 is recommended. On special request, these transistors can be 1. Emitter 2. Collector 3. Base manufactured in different pin configurations. T

MMBTSC945 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups R, O, Y, P and L, according to its DC current gain. As complementary type the PNP transistor MMBTSA733 is recommended. TO-236 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO

SEMICONDUCTOR 2SC945LT1 Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR Package:SOT-23 * Collector Current: Ic= 150mA * Collector-Emitter Voltage:Vce= 50V * High Total Power Dissipation:Pc=225mW * High Hfe And Good Linearity ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating UnitCollector-Base Voltage Vcbo 60 V

SEMICONDUCTORFTC945BTECHNICAL DATANPN TRANSISTOR B CFEATURE Excellent hFE linearity DIM MILLIMETERS Low noise A 4.70 MAXEB 4.80 MAXG Complementary to FTA733B C 3.70 MAXDD 0.55 MAXE 1.00MAXIMUM RATINGS (Ta=25 unless otherwise noted) F 1.27G 0.85H 0.45Symbol Parameter Value Units_HJ 14.00 + 0.50L 2.30F FVCBO Collector-Base Voltage 60 V

SMD TypeSMD Type si o orsSMD Type TranDistdesNPN Transistors2SC945SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector current up to 150mA High hFE linearity1 2 Complementary to 2SA733+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector

TRANSISTOR C945AF MAIN CHARACTERISTICS FEATURES IC 150mA Epitaxial silicon VCEO 52V High switching speed VCBO 70V RoHS RoHS product PC 400mW APPLICATIONS High frequency switch power supply Commonly power amplifier circuit High frequency p

TRANSISTOR C945B MAIN CHARACTERISTICS FEATURES IC 150mA Epitaxial silicon VCEO 52V High switching speed VCBO 70V RoHS RoHS product PC 400mW APPLICATIONS High frequency switch power supply Commonly power amplifier circuit High frequency po

Product specification Silicon Epitaxial Planar Transistor 2SC945 FEATURES Pb High voltage and high current. Lead-free Excellent h linearity. FE Low noise. APPLICATIONS Audio frequency amplifier. SOT-23 ORDERING INFORMATION Type No. Marking Package Code 2SC945 CR SOT-23 : none is for Lead Free package; G is for Halogen Free package

www.msksemi.comC945-MSSemiconductor CompianceSemiconductor CompianceTRANSISTOR (NPN) FEATURE 1. BASE Excellent hFE Linearity2. EMITTERSOT23 Low noise 3. COLLECTOR Complementary toA733-MS MARKING:CR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 50 VVEBO Emit

MMBTSC945 NPN Transistor SOT-23 Features (TO-236) Excellent hFE Linearity Low noise1.Base 2.Emitter 3.CollectorMarking: CRAbsolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage V 60 V CBOCollector Emitter Voltage V 50 V CEOEmitter Base Voltage V 5 V EBOCollector Curr

2SC945NPN Transistors321.Base2.Emitter Features1 3.Collector Collector current up to 150mA Simplified outline(SOT-23) High hFE linearity Complementary to 2SA733 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector to base voltage VCBO 60 VCollector to emitter voltage VCEO 50 VEmitter to base voltage VEBO 5 VCollector curren

SHI KUES (945 SOT23F Power dissipation P 0.2 W

HSC945NPN-TRANSISTORNPN, 100mA, 60V NPN HSC945NPN EPITAXIAL PLANAR TRANSISTOR SMDHSC945LT1NPN, BECExcellent hFE linearityGeneral Purpose TransistorsLow noiseComplementary to A733Transistor Polarity: NPNC945Transistor pinout: BEC 2SC945C945L

isc Silicon NPN Transistor 2SC945DESCRIPTIONHigh VoltageExcellent h linearityFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDsigned for use in driver stage of AF amplifierand low speed switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 60 VCBOV Collector-Emitter Vol