C945 - описание и поиск аналогов

C945 60V, 0.15A, 200mW NPN Plastic Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES Excellent hFE Linearity A L Low noise 3 3 Complementary to A733 Top View C B 1 1 2 2 MARKING K E Product Marking Code D C945 CR H J F G Millimeter Millimeter REF. REF. PACK

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 C945 TRANSISTOR (NPN) FEATURE 1. BASE Excellent hFE Linearity 2. EMITTER Low noise 3. COLLECTOR Complementary to A733 MARKING CR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitt

C945 TRANSISTOR (NPN) SOT-23 FEATURE Excellent hFE Linearity Low noise 1. BASE 2. EMITTER Complementary to A733 3. COLLECTOR MARKING CR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150 mA PC C

C945 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Excellent hFE Linearity hFE(IC =0.1mA) hFE(IC=2mA)=0.95(Typ.) Low noise Complementary to A733 MARKING CR Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltag

C945(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Excellent hFE linearity Low noise Complementary to A733 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage 5 V IC Colle

C945 NPN Transistors TO-92 P b Lead(Pb)-Free 1. EMITTER 1 2 2. COLLECTOR 3 3. BASE 0.4 Junction Temperature Tj +150 C Storage Temperature T -40 to + 150 C STG WEITRON 1/4 08-Feb-06 http //www.weitron.com.tw C945 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain hFE1 VCE=

FM120-M WILLAS THRU C945 SOT-23 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produc Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to TRANSI

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors TO-92 C945 TRANSISTOR (NPN ) 1.EMITTER FEATURE Excellent hFE linearity 2.COLLECTOR Low noise 3. BASE Complementary to A733 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1 2 3 Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Volt

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors C945 TRANSISTOR (NPN) FEATURES Complimentary to A733 MARKING CR. MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Vol

TO-92 Plastic-Encapsulate Transistors FEATURE TO-92 Excellent hFE linearity Low noise 1.EMITTER Complementary to A733 2.BASE MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS (TA=25 unless otherwise noted) MAXIMUM RATINGS 3.COLLECTOR Symbol Parameter Value Units Symbol Parameter Value Units Symbol Parameter Value Units Symbol Parameter Value Units 1 2 3 VCBO 60 V

C945 TRANSISTOR NPN TRANSISTOR NPN FEATURE SOT-23 Excellent hFE Linearity Low noise 1. BASE Complementary to A733 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 50 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current 150 mA C P Collector

SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 C945 TRANSISTOR (NPN ) 1.EMITTER FEATURE Excellent hFE linearity 2.COLLECTOR Low noise 3. BASE Complementary to A733 MAXIMUM RATINGS (TA=25 unless otherwise noted) 1 2 3 Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltag

C945 Silicon Epitaxial Planar Transistor FEATURES High voltage and high current. Excellent h linearity. FE Low noise. APPLICATIONS Audio frequency amplifier. SOT-23 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value Units Collector-Base Voltage V 60 V CBO Collector-Emitter Voltage V 50 V CEO Emitter-Base Voltage V 5 V

C945 C945 C945 C945 C9 45 TRANSISTOR(NPN) FEATURE SOT-23 Excellent hFE Linearity Low noise 1 BASE Complementary to A733 2 EMITTER 3 COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO 60 V Collector-Base Voltage VCEO 50 V Collector-Emitter Voltage VEBO 5 V Emitter-Base Voltage IC Collector Current -Cont

C945 TRANSISTOR (NPN) SOT-23 FEATURE Excellent hFE Linearity Low noise 1 BASE 2 EMITTER Complementary to A733 3 COLLECTOR MARKING CR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO 60 V Collector-Base Voltage VCEO 50 V Collector-Emitter Voltage VEBO 5 V Emitter-Base Voltage IC Collector Current -Continuous 150 mA PC C

C945 BIPOLAR TRANSISTOR (NPN) FEATURES Complementary to A733 Excellent h Linearity FE Low Noise Surface Mount device SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A Parameter Symbol Value Unit Col

Features A SOT-23 C Dim Min Max A 0.37 0.51 B C B 1.20 1.40 TOP VIEW B E C D 2.30 2.50 E G D 0.89 1.03 E 0.45 0.60 H G 1.78 2.05 K H 2.80 3.00 J J 0.013 0.10 Maximum Ratings @ T = 25 C unless otherwise specified A K 0.903 1.10 Pa

DISCRETE SEMICONDUCTORS DATA SHEET ndbook, halfpage M3D186 2PC945 NPN general purpose transistor 1999 May 28 Product specification Supersedes data of 1997 Mar 26 Philips Semiconductors Product specification NPN general purpose transistor 2PC945 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 50 V). 1 base 2 collector APPLICATIONS 3 emitter

KSC945 Audio Frequency Amplifier & High Frequency OSC. Complement to KSA733 Collector-Base Voltage VCBO=60V High Current Gain Bandwidth Product fT=300MHz (TYP) Suffix -C means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted

Audio Frequency AmpIifier & High Frequency OSC. Complement to KSA733 Collector-Base Voltage VCBO=60V High Current Gain Bandwidth Product fT=300MHz (TYP.) TO-92 1. Emitter 2. Base 3. Collector NPN EpitaxiaI SiIicon Transistor AbsoIute Maximum Ratings Ta=25 C unless otherwise noted SymboI Parameter VaIue Units VCBO Collector-Base Voltage 60 V VCEO Coll

MCC 2SC945-Y Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components 2SC945-GR CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Capable of 0.4Watts of Power Dissipation. NPN Silicon Collector-current 0.15A Plastic-Encapsulate Collector-base Voltage 60V Operating and storage junction temperature range -55OC to +150OC

MCC 2SC945-Y Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components 2SC945-GR CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Capable of 0.4Watts of Power Dissipation. NPN Silicon Collector-current 0.15A Plastic-Encapsulate Collector-base Voltage 60V Operating and storage junction temperature range -55OC to +150OC

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

UNISONIC TECHNOLOGIES CO., LTD 2SC945 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR DESCRIPTION The UTC 2SC945 is an audio frequency amplifier high frequency OSC NPN transistor. FEATURES * Collector-Emitter voltage BVCBO=50V * Collector current up to 150mA * High hFE linearity * Complimentary to UTC 2SA733 ORDERING I

UTC KSC945 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR DESCRIPTION The UTC KSC945 is an audio frequency amplifier high frequency OSC NPN transistor. 1 FEATURES *Collector-Base voltage BVCBO=60V TO-92 *Collector current up to 150mA *High hFE linearity *Complimentary to KSA733 1 EMITTER 2 BASE 3 COLLECTOR ABSOLUT

STC945 NPN Silicon Transistor Description PIN Connection General small signal amplifier C Features B Low collector saturation voltage VCE(sat)=0.25V(Max.) Low output capacitance Cob=2pF(Typ.) E Complementary pair with STA733 TO-92 Ordering Information Type NO. Marking Package Code STC945 STC945 TO-92 Absolute maximum ratings (Ta=25 C) C

ST 2SC945 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups, R, O, Y, P and L, according to its DC current gain. As complementary type the PNP transistor ST 2SA733 is recommended. On special request, these transistors can be 1. Emitter 2. Collector 3. Base manufactured in different pin configurati

C945T NPN Silicon Elektronische Bauelemente Plastic-Encapsulate Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES Low noise TO-92 Excellent hFE linearity Complementary to A733T MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Symbol Value Units Collector-Base Voltage VCBO 60 V 1 Collector-Emitter Voltage VCEO 50 V 2 3

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CSC945 CC8050 TO-92 Plastic Package B C E Audio Frequency General Purpose and Driver Stage Amplifier Application Complmentary CSA733 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) DESCRIPTION SYMBOL VALUE UNITS VCBO Collector Base Voltage 60 V VCEO Collector Em

SEMICONDUCTOR KTC945B TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES Excellent hFE Linearity. hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) N DIM MILLIMETERS Low Noise NF=1dB(Typ.). at f=1kHz A 4.70 MAX E K B 4.80 MAX Complementary to KTA733B(O, Y, GR class). G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 _ MA

SEMICONDUCTOR KTC945 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES Excellent hFE Linearity. hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) N DIM MILLIMETERS Low Noise NF=1dB(Typ.). at f=1kHz A 4.70 MAX E K B 4.80 MAX Complementary to KTA733. G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 _ MAXIMUM RATING (Ta=2

C945LT1 NPN Transistors 3 P b Lead(Pb)-Free 1 2 C945LT1=CR WEITRON http //www.weitron.com.tw C945LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain hFE - - 130 400 (IC=1 mAdc, VCE=6.0 Vdc) Collector-Emitter Saturation Voltage VCE(sat) - Vdc - 0.3 (IC=100 mAdc, IB=10mAdc)

Spec. No. HE6517 HI-SINCERITY Issued Date 1995.02.11 Revised Date 2004.08.09 MICROELECTRONICS CORP. Page No. 1/5 HSC945 NPN EPITAXIAL PLANAR TRANSISTOR Description The HSC945 is designed for using driver stage of AP amplifier and low speed switching applications. TO-92 Absolute Maximum Ratings Maximum Temperatures Storage Temperature ...................................

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC945 TRANSISTOR (NPN) FEATURE 1. BASE Excellent hFE Linearity 2. EMITTER Low noise 3. COLLECTOR Complementary to A733 MARKING CR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emi

2SC945 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features , h FE High voltage, excellent hFE linearity. / Applications AF amplifier and low speed switching applications. / Eq

2SC945 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups, R, O, Y, P and L, according to its DC current gain. As complementary type the PNP transistor 2SA733 is recommended. On special request, these transistors can be 1. Emitter 2. Collector 3. Base manufactured in different pin configurations. T

MMBTSC945 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups R, O, Y, P and L, according to its DC current gain. As complementary type the PNP transistor MMBTSA733 is recommended. TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO

SEMICONDUCTOR 2SC945LT1 Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR Package SOT-23 * Collector Current Ic= 150mA * Collector-Emitter Voltage Vce= 50V * High Total Power Dissipation Pc=225mW * High Hfe And Good Linearity ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating Unit Collector-Base Voltage Vcbo 60 V

SEMICONDUCTOR FTC945B TECHNICAL DATA NPN TRANSISTOR B C FEATURE Excellent hFE linearity DIM MILLIMETERS Low noise A 4.70 MAX E B 4.80 MAX G Complementary to FTA733B C 3.70 MAX D D 0.55 MAX E 1.00 MAXIMUM RATINGS (Ta=25 unless otherwise noted) F 1.27 G 0.85 H 0.45 Symbol Parameter Value Units _ H J 14.00 + 0.50 L 2.30 F F VCBO Collector-Base Voltage 60 V

SMD Type SMD Type si o ors SMD Type TranDistdes NPN Transistors 2SC945 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector current up to 150mA High hFE linearity 1 2 Complementary to 2SA733 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector

TRANSISTOR C945AF MAIN CHARACTERISTICS FEATURES IC 150mA Epitaxial silicon VCEO 52V High switching speed VCBO 70V RoHS RoHS product PC 400mW APPLICATIONS High frequency switch power supply Commonly power amplifier circuit High frequency p

TRANSISTOR C945B MAIN CHARACTERISTICS FEATURES IC 150mA Epitaxial silicon VCEO 52V High switching speed VCBO 70V RoHS RoHS product PC 400mW APPLICATIONS High frequency switch power supply Commonly power amplifier circuit High frequency po

Product specification Silicon Epitaxial Planar Transistor 2SC945 FEATURES Pb High voltage and high current. Lead-free Excellent h linearity. FE Low noise. APPLICATIONS Audio frequency amplifier. SOT-23 ORDERING INFORMATION Type No. Marking Package Code 2SC945 CR SOT-23 none is for Lead Free package; G is for Halogen Free package

www.msksemi.com C945-MS Semiconductor Compiance Semiconductor Compiance TRANSISTOR (NPN) FEATURE 1. BASE Excellent hFE Linearity 2. EMITTER SOT 23 Low noise 3. COLLECTOR Complementary to A733-MS MARKING CR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emit

MMBTSC945 NPN Transistor SOT-23 Features (TO-236) Excellent hFE Linearity Low noise 1.Base 2.Emitter 3.Collector Marking CR Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage V 60 V CBO Collector Emitter Voltage V 50 V CEO Emitter Base Voltage V 5 V EBO Collector Curr

2SC945 NPN Transistors 3 2 1.Base 2.Emitter Features 1 3.Collector Collector current up to 150mA Simplified outline(SOT-23) High hFE linearity Complementary to 2SA733 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 5 V Collector curren

SHI KUES (945 SOT 23 F Power dissipation P 0.2 W

HSC945 NPN-TRANSISTOR NPN, 100mA, 60V NPN HSC945 NPN EPITAXIAL PLANAR TRANSISTOR SMD HSC945LT1 NPN, BEC Excellent hFE linearity General Purpose Transistors Low noise Complementary to A733 Transistor Polarity NPN C945 Transistor pinout BEC 2SC945 C945L

isc Silicon NPN Transistor 2SC945 DESCRIPTION High Voltage Excellent h linearity FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Dsigned for use in driver stage of AF amplifier and low speed switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 60 V CBO V Collector-Emitter Vol