KTC601E Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KTC601E  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.15 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 80 MHz

Capacitancia de salida (Cc): 2 pF

Ganancia de corriente contínua (hFE): 120

Encapsulados: TESV

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KTC601E datasheet

 ..1. Size:42K  kec
 ktc601e.pdf pdf_icon

KTC601E

SEMICONDUCTOR KTC601E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES A super-minimold package houses 2 transistor. Excellent temperature response between these 2 transistor. 1 5 DIM MILLIMETERS _ A 1.6 0.05 + High pairing property in hFE. _ + A1 1.0 0.05 2 _ + B 1.6 0.05 The follwing characteristics are commo

 8.1. Size:40K  kec
 ktc601u.pdf pdf_icon

KTC601E

SEMICONDUCTOR KTC601U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B FEATURES B1 A super-minimold package houses 2 transistor. 1 5 DIM MILLIMETERS _ Excellent temperature response between these 2 transistor. A 2.00 + 0.20 2 _ A1 1.3 + 0.1 High pairing property in hFE. _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 The follwin

 8.2. Size:708K  kec
 ktc601f.pdf pdf_icon

KTC601E

SEMICONDUCTOR KTC601F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. TENTATIVE FEATURES Thin fine pitch super mini 5pin. Excellent temperature response between these 2 transistor. High pairing property in hFE. The follwing characteristics are common for Q1, Q2. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCB

 8.3. Size:1038K  kexin
 ktc601u.pdf pdf_icon

KTC601E

SMD Type Transistors NPN Transistors KTC601U SOT-353 Unit mm 1.3+0.1 -0.1 0.65 Features Excellent temperature response between these 2 transistor. High pairing property in hFE. The follwing characteristics are common for Q1, Q2. +0.1 +0.05 0.1-0.02 0.3 -0.1 +0.1 2.1-0.1 5 4 1. Q1 BASE 2. Q , Q EMITTER 1 2 3. Q BASE 2 4. Q COLLECTOR 2 5. Q COLLECTOR

MOSTRAR MÁS

Otros transistores... KTC5197, KTC5242, KTC5242A, KTC5706, KTC5706D, KTC5706L, KTC5707D, KTC5707L, BC639, KTC601F, KTC601UGR, KTC611T, KTC801E, KTC801F, KTC801U, KTC802E, KTC8050S