All Transistors. KTC601E Datasheet

 

KTC601E Datasheet, Equivalent, Cross Reference Search


   Type Designator: KTC601E
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 80 MHz
   Collector Capacitance (Cc): 2 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: TESV

 KTC601E Transistor Equivalent Substitute - Cross-Reference Search

   

KTC601E Datasheet (PDF)

 ..1. Size:42K  kec
ktc601e.pdf

KTC601E
KTC601E

SEMICONDUCTOR KTC601ETECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.BB1FEATURESA super-minimold package houses 2 transistor.Excellent temperature response between these 2 transistor.1 5 DIM MILLIMETERS_A 1.6 0.05+High pairing property in hFE._+A1 1.0 0.052_+B 1.6 0.05The follwing characteristics are commo

 8.1. Size:40K  kec
ktc601u.pdf

KTC601E
KTC601E

SEMICONDUCTOR KTC601UTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.BFEATURES B1A super-minimold package houses 2 transistor.1 5DIM MILLIMETERS_Excellent temperature response between these 2 transistor. A 2.00 + 0.202 _A1 1.3 + 0.1High pairing property in hFE._B 2.1 + 0.13 4 D_B1 1.25 + 0.1The follwin

 8.2. Size:708K  kec
ktc601f.pdf

KTC601E
KTC601E

SEMICONDUCTOR KTC601FTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.TENTATIVEFEATURESThin fine pitch super mini 5pin.Excellent temperature response between these 2 transistor.High pairing property in hFE.The follwing characteristics are common for Q1, Q2.MAXIMUM RATING (Ta=25)CHARACTERISTIC SYMBOL RATING UNITVCB

 8.3. Size:1038K  kexin
ktc601u.pdf

KTC601E
KTC601E

SMD Type TransistorsNPN TransistorsKTC601USOT-353 Unit: mm1.3+0.1-0.10.65 Features Excellent temperature response between these 2 transistor. High pairing property in hFE. The follwing characteristics are common for Q1, Q2.+0.1 +0.050.1-0.020.3 -0.1+0.12.1-0.15 41. Q1 BASE2. Q , Q EMITTER1 23. Q BASE 24. Q COLLECTOR25. Q COLLECTOR

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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