KTX214E . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KTX214E
Código: BI
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 47 kOhm
Resistencia Base-Emisor R2 = 47 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-emisor (Vce): 50(12) V
Corriente del colector DC máxima (Ic): 0.1(0.5) A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 320(200) MHz
Capacitancia de salida (Cc): 7.5 pF
Ganancia de corriente contínua (hfe): 20(270)
Paquete / Cubierta: TES6
Búsqueda de reemplazo de transistor bipolar KTX214E
KTX214E Datasheet (PDF)
ktx214e.pdf
KTX214ESEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURESIncluding two devices in TES6.1 6 DIM MILLIMETERS(Thin Extreme Super mini type with 6 leads.) _A 1.6 + 0.05_A1 1.0 + 0.05With Built-in bias resistors. 2 5_B 1.6 + 0.05_B1 1.2 + 0.05Simplify circuit design. C
ktx214u.pdf
KTX214USEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BFEATURESB1Including two devices in US6.DIM MILLIMETERS1 6_(Ultra Super mini type with 6 leads.) A 2.00 + 0.20_2 5 A1 1.3 + 0.1With Built-in bias resistors. _B 2.1 + 0.13 4 D _B1 1.25 + 0.1Simplify circuit design. C 0
ktx213e.pdf
KTX213ESEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR PNP/NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURESIncluding two devices in TES6.1 6 DIM MILLIMETERS(Thin Extreme Super mini type with 6 leads.) _A 1.6 + 0.05_A1 1.0 + 0.05With Built-in bias resistors. 2 5_B 1.6 + 0.05_B1 1.2 + 0.05Simplify circuit design.
ktx213u.pdf
KTX213USEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR PNP/NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BFEATURESB1Including two devices in US6.DIM MILLIMETERS1 6_(Ultra Super mini type with 6 leads.) A 2.00 + 0.20_2 5 A1 1.3 + 0.1With Built-in bias resistors. _B 2.1 + 0.13 4 D _B1 1.25 + 0.1Simplify circuit design.
ktx211e.pdf
KTX211ESEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR PNP/NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURESIncluding two devices in TES6.1 6 DIM MILLIMETERS(Thin Extreme Super mini type with 6 leads.) _A 1.6 + 0.05_A1 1.0 + 0.05With Built-in bias resistors. 2 5_B 1.6 + 0.05_B1 1.2 + 0.05Simplify circuit d
ktx216u.pdf
KTX216USEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BFEATURESB1Including two devices in US6.DIM MILLIMETERS1 6_(Ultra Super mini type with 6 leads.) A 2.00 + 0.20_2 5 A1 1.3 + 0.1With Built-in bias resistors. _B 2.1 + 0.13 4 D _B1 1.25 + 0.1Simplify circuit design. C 0
ktx212e.pdf
KTX212ESEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURESIncluding two devices in TES6.1 6 DIM MILLIMETERS(Thin Extreme Super mini type with 6 leads.) _A 1.6 + 0.05_A1 1.0 + 0.05With Built-in bias resistors. 2 5_B 1.6 + 0.05_B1 1.2 + 0.05Simplify circuit design. C
ktx211u.pdf
KTX211USEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR PNP/NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BFEATURESB1Including two devices in US6.DIM MILLIMETERS1 6_(Ultra Super mini type with 6 leads.) A 2.00 + 0.20_2 5 A1 1.3 + 0.1With Built-in bias resistors. _B 2.1 + 0.13 4 D _B1 1.25 + 0.1Simplify circuit design.
ktx212u.pdf
KTX212USEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BFEATURESB1Including two devices in US6.DIM MILLIMETERS1 6_(Ultra Super mini type with 6 leads.) A 2.00 + 0.20_2 5 A1 1.3 + 0.1With Built-in bias resistors. _B 2.1 + 0.13 4 D _B1 1.25 + 0.1Simplify circuit design. C 0
ktx215u.pdf
KTX215USEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR PNP/NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BFEATURESB1Including two devices in US6.DIM MILLIMETERS1 6_(Ultra Super mini type with 6 leads.) A 2.00 + 0.20_2 5 A1 1.3 + 0.1With Built-in bias resistors. _B 2.1 + 0.13 4 D _B1 1.25 + 0.1Simplify circuit design.
ktx215e.pdf
KTX215ESEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR PNP/NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURESIncluding two devices in TES6.1 6 DIM MILLIMETERS(Thin Extreme Super mini type with 6 leads.) _A 1.6 + 0.05_A1 1.0 + 0.05With Built-in bias resistors. 2 5_B 1.6 + 0.05_B1 1.2 + 0.05Simplify circuit design.
Otros transistores... HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , 2222A , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .
History: 2N1500
History: 2N1500
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