KTX214E Datasheet, Equivalent, Cross Reference Search
Type Designator: KTX214E
SMD Transistor Code: BI
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 47 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.2
W
Maximum Collector-Emitter Voltage |Vce|: 50(12)
V
Maximum Collector Current |Ic max|: 0.1(0.5)
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 320(200)
MHz
Collector Capacitance (Cc): 7.5
pF
Forward Current Transfer Ratio (hFE), MIN: 20(270)
Noise Figure, dB: -
Package: TES6
KTX214E Transistor Equivalent Substitute - Cross-Reference Search
KTX214E Datasheet (PDF)
ktx214e.pdf
KTX214ESEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURESIncluding two devices in TES6.1 6 DIM MILLIMETERS(Thin Extreme Super mini type with 6 leads.) _A 1.6 + 0.05_A1 1.0 + 0.05With Built-in bias resistors. 2 5_B 1.6 + 0.05_B1 1.2 + 0.05Simplify circuit design. C
ktx214u.pdf
KTX214USEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BFEATURESB1Including two devices in US6.DIM MILLIMETERS1 6_(Ultra Super mini type with 6 leads.) A 2.00 + 0.20_2 5 A1 1.3 + 0.1With Built-in bias resistors. _B 2.1 + 0.13 4 D _B1 1.25 + 0.1Simplify circuit design. C 0
ktx213e.pdf
KTX213ESEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR PNP/NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURESIncluding two devices in TES6.1 6 DIM MILLIMETERS(Thin Extreme Super mini type with 6 leads.) _A 1.6 + 0.05_A1 1.0 + 0.05With Built-in bias resistors. 2 5_B 1.6 + 0.05_B1 1.2 + 0.05Simplify circuit design.
ktx213u.pdf
KTX213USEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR PNP/NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BFEATURESB1Including two devices in US6.DIM MILLIMETERS1 6_(Ultra Super mini type with 6 leads.) A 2.00 + 0.20_2 5 A1 1.3 + 0.1With Built-in bias resistors. _B 2.1 + 0.13 4 D _B1 1.25 + 0.1Simplify circuit design.
ktx211e.pdf
KTX211ESEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR PNP/NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURESIncluding two devices in TES6.1 6 DIM MILLIMETERS(Thin Extreme Super mini type with 6 leads.) _A 1.6 + 0.05_A1 1.0 + 0.05With Built-in bias resistors. 2 5_B 1.6 + 0.05_B1 1.2 + 0.05Simplify circuit d
ktx216u.pdf
KTX216USEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BFEATURESB1Including two devices in US6.DIM MILLIMETERS1 6_(Ultra Super mini type with 6 leads.) A 2.00 + 0.20_2 5 A1 1.3 + 0.1With Built-in bias resistors. _B 2.1 + 0.13 4 D _B1 1.25 + 0.1Simplify circuit design. C 0
ktx212e.pdf
KTX212ESEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURESIncluding two devices in TES6.1 6 DIM MILLIMETERS(Thin Extreme Super mini type with 6 leads.) _A 1.6 + 0.05_A1 1.0 + 0.05With Built-in bias resistors. 2 5_B 1.6 + 0.05_B1 1.2 + 0.05Simplify circuit design. C
ktx211u.pdf
KTX211USEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR PNP/NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BFEATURESB1Including two devices in US6.DIM MILLIMETERS1 6_(Ultra Super mini type with 6 leads.) A 2.00 + 0.20_2 5 A1 1.3 + 0.1With Built-in bias resistors. _B 2.1 + 0.13 4 D _B1 1.25 + 0.1Simplify circuit design.
ktx212u.pdf
KTX212USEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BFEATURESB1Including two devices in US6.DIM MILLIMETERS1 6_(Ultra Super mini type with 6 leads.) A 2.00 + 0.20_2 5 A1 1.3 + 0.1With Built-in bias resistors. _B 2.1 + 0.13 4 D _B1 1.25 + 0.1Simplify circuit design. C 0
ktx215u.pdf
KTX215USEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR PNP/NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BFEATURESB1Including two devices in US6.DIM MILLIMETERS1 6_(Ultra Super mini type with 6 leads.) A 2.00 + 0.20_2 5 A1 1.3 + 0.1With Built-in bias resistors. _B 2.1 + 0.13 4 D _B1 1.25 + 0.1Simplify circuit design.
ktx215e.pdf
KTX215ESEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR PNP/NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURESIncluding two devices in TES6.1 6 DIM MILLIMETERS(Thin Extreme Super mini type with 6 leads.) _A 1.6 + 0.05_A1 1.0 + 0.05With Built-in bias resistors. 2 5_B 1.6 + 0.05_B1 1.2 + 0.05Simplify circuit design.
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
