2SC5070 Todos los transistores

Ordering number EN4473 NPN Epitaxial Planar Silicon Transistor 2SC5070 Low-Frequency General-Purpose Amplifier, Driver Applications Features Package Dimensions High current capacity. unit mm Adoption of MBIT process. 2084A High DC current gain. [2SC5070] Low collector-to-emitter saturation voltage. 4.5 1.9 2.6 10.5 High VEBO. 1.2 1.4 1.2 0.5 1.6 0.5 1 2

Power Transistors 2SC5077, 2SC5077A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 4.6 0.2 Features 9.9 0.3 2.9 0.2 High-speed switching 3.2 0.1 High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package with outstanding insulation,

2SC5078 Silicon NPN Epitaxial ADE-208-221 1st. Edition Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 12 GHz Typ High gain, low noise figure PG = 17 dB Typ, NF = 1.6 dB Typ at f = 900 MHz Outline MPAK-4 2 3 1 1. Collector 4 2. Emitter 3. Base 4. Emitter 2SC5078 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Co

2SC5079 Silicon NPN Epitaxial ADE-208-222 1st. Edition Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 12 GHz Typ High gain, low noise figure PG = 17 dB Typ, NF = 1.6 dB Typ at f = 900 MHz Outline CMPAK 4 2 3 1 1. Collector 4 2. Emitter 3. Base 4. Emitter 2SC5079 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit

2SC5071 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application Switching Regulator and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions MT-100(TO3P) Symbol Conditions Symbol 2SC5071 Unit 2SC5071 Unit 0.2 4.8 0.4 15.6 ICBO VCB=500V VCBO 500 V 100max A 0.1 9.