2SC5070 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC5070
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1.5 W
Tensión colector-base (Vcb): 30 V
Tensión colector-emisor (Vce): 25 V
Tensión emisor-base (Veb): 15 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 260 MHz
Capacitancia de salida (Cc): 27 pF
Ganancia de corriente contínua (hfe): 600
Paquete / Cubierta: FLP
Búsqueda de reemplazo de transistor bipolar 2SC5070
2SC5070 Datasheet (PDF)
2sc5070.pdf
Ordering number:EN4473NPN Epitaxial Planar Silicon Transistor2SC5070Low-Frequency General-Purpose Amplifier,Driver ApplicationsFeatures Package Dimensions High current capacity.unit:mm Adoption of MBIT process.2084A High DC current gain.[2SC5070] Low collector-to-emitter saturation voltage.4.51.9 2.610.5 High VEBO.1.2 1.41.20.51.60.51 2
2sc500 2sc501 2sc502 2sc503 2sc504 2sc505 2sc506 2sc507 2sc508 2sc509 2sc510 2sc511.pdf
2sc5077.pdf
Power Transistors2SC5077, 2SC5077ASilicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm4.6 0.2Features9.9 0.3 2.9 0.2High-speed switching 3.2 0.1High collector to base voltage VCBOWide area of safe operation (ASO)Satisfactory linearity of foward current transfer ratio hFEFull-pack package with outstanding insulation,
2sc5078.pdf
2SC5078Silicon NPN EpitaxialADE-208-2211st. EditionApplicationVHF / UHF wide band amplifierFeatures High gain bandwidth productfT = 12 GHz Typ High gain, low noise figurePG = 17 dB Typ, NF = 1.6 dB Typ at f = 900 MHzOutlineMPAK-42311. Collector42. Emitter3. Base4. Emitter2SC5078Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCo
2sc5079.pdf
2SC5079Silicon NPN EpitaxialADE-208-2221st. EditionApplicationVHF / UHF wide band amplifierFeatures High gain bandwidth productfT = 12 GHz Typ High gain, low noise figurePG = 17 dB Typ, NF = 1.6 dB Typ at f = 900 MHzOutlineCMPAK42311. Collector42. Emitter3. Base4. Emitter2SC5079Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings Unit
2sc5071.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC5071 DESCRIPTION With TO-3PN package High voltage High speed switching APPLICATIONS For switching regulator and general purpose applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=
2sc5071.pdf
2SC5071Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor)Application : Switching Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-100(TO3P)Symbol ConditionsSymbol 2SC5071 Unit 2SC5071 Unit0.24.80.415.6ICBO VCB=500VVCBO 500 V 100max A0.19.
2sc5071.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5071DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: 3CG5
History: 3CG5
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050