2SC5070 Datasheet. Specs and Replacement

Type Designator: 2SC5070  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1.5 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 15 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 260 MHz

Collector Capacitance (Cc): 27 pF

Forward Current Transfer Ratio (hFE), MIN: 600

Noise Figure, dB: -

Package: FLP

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2SC5070 datasheet

 ..1. Size:106K  sanyo

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2SC5070

Ordering number EN4473 NPN Epitaxial Planar Silicon Transistor 2SC5070 Low-Frequency General-Purpose Amplifier, Driver Applications Features Package Dimensions High current capacity. unit mm Adoption of MBIT process. 2084A High DC current gain. [2SC5070] Low collector-to-emitter saturation voltage. 4.5 1.9 2.6 10.5 High VEBO. 1.2 1.4 1.2 0.5 1.6 0.5 1 2... See More ⇒

 8.2. Size:220K  toshiba

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2SC5070

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 8.3. Size:219K  toshiba

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2SC5070

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Detailed specifications: 2SC5046, 2SC5049, 2SC5050, 2SC5051, 2SC5052, 2SC5060, 2SC5063, 2SC5069, D880, 2SC5077, 2SC5077A, 2SC5078, 2SC5079, 2SC5080, 2SC5081, 2SC5089, 2SC5090

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