NJW0281G Todos los transistores

 

NJW0281G Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NJW0281G
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 150 W
   Tensión colector-base (Vcb): 250 V
   Tensión colector-emisor (Vce): 250 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 15 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 30 MHz
   Capacitancia de salida (Cc): 400 pF
   Ganancia de corriente contínua (hfe): 75
   Paquete / Cubierta: TO3P

 Búsqueda de reemplazo de transistor bipolar NJW0281G

 

Principales características: NJW0281G

 ..1. Size:80K  onsemi
njw0281g njw0302g.pdf pdf_icon

NJW0281G

NJW0281G (NPN) NJW0302G (PNP) Preferred Devices Complementary NPN-PNP Power Bipolar Transistors These complementary devices are lower power versions of the popular NJW3281G and NJW1302G audio output transistors. With http //onsemi.com superior gain linearity and safe operating area performance, these transistors are ideal for high fidelity audio amplifier output stages and 15 AMPERES

 ..2. Size:1360K  cn evvo
njw0281g.pdf pdf_icon

NJW0281G

Silicon NPN transistor Power Amplifier Applications Complementary to NJW0302G High collector voltage VCEO=230V (min) Recommended for 100-W high-fidelity audio frequency amplifier Output stage Note1 Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in

 ..3. Size:1183K  cn minos
njw0281g.pdf pdf_icon

NJW0281G

NJW0281G Transistor SiliconNPNTripleDiffusedType NJW0281G Power Amplifier Applications ComplementarytoNJW0302G Highcollector voltage VCEO=230V (min) Recommendedfor 100-Whigh-fidelity audiofrequencyamplifier Output stage Note1 Usingcontinuouslyunder heavyloads (e.g. theapplication of hightemperature/current/voltageandthesignificant change intemperature, etc.) may causethis product

 ..4. Size:338K  cn sptech
njw0281g.pdf pdf_icon

NJW0281G

SPTECH Product Specification SPTECH Silicon NPN Power Transistor NJW0281G DESCRIPTION High Collector-Emitter Breakdown Voltage- V =250V(Min) (BR)CEO Good Linearity of h FE Complement to Type NJW0302G APPLICATIONS Designed for high fidelity audio amplifier and other linear applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltag

Otros transistores... 2SC945P , C8050B , C8050C , C8050D , NE685M13 , S8050MB , S8050MC , S8050MD , 2SD313 , NJW0302G , 2SC5614 , 2SC5800 , 2SD2195 , 2SD2398 , 2SD2004 , 2SA1193K , 129NT1A-1 .

 

 
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