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NJW0281G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NJW0281G
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 150 W
   Tensión colector-base (Vcb): 250 V
   Tensión colector-emisor (Vce): 250 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 15 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 30 MHz
   Capacitancia de salida (Cc): 400 pF
   Ganancia de corriente contínua (hfe): 75
   Paquete / Cubierta: TO3P
 

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NJW0281G Datasheet (PDF)

 ..1. Size:80K  onsemi
njw0281g njw0302g.pdf pdf_icon

NJW0281G

NJW0281G (NPN)NJW0302G (PNP)Preferred DevicesComplementary NPN-PNPPower Bipolar TransistorsThese complementary devices are lower power versions of thepopular NJW3281G and NJW1302G audio output transistors. Withhttp://onsemi.comsuperior gain linearity and safe operating area performance, thesetransistors are ideal for high fidelity audio amplifier output stages and15 AMPERES

 ..2. Size:1360K  cn evvo
njw0281g.pdf pdf_icon

NJW0281G

Silicon NPN transistorPower Amplifier ApplicationsComplementary to NJW0302GHigh collector voltage:VCEO=230V (min)Recommended for 100-W high-fidelity audio frequency amplifierOutput stageNote1: Using continuously under heavy loads (e.g. the application ofhigh temperature/current/voltage and the significant change intemperature, etc.) may cause this product to decrease in

 ..3. Size:1183K  cn minos
njw0281g.pdf pdf_icon

NJW0281G

NJW0281GTransistor SiliconNPNTripleDiffusedTypeNJW0281GPower Amplifier Applications ComplementarytoNJW0302G Highcollector voltage:VCEO=230V (min) Recommendedfor 100-Whigh-fidelity audiofrequencyamplifierOutput stageNote1: Usingcontinuouslyunder heavyloads (e.g. theapplicationof hightemperature/current/voltageandthesignificant changeintemperature, etc.) may causethis product

 ..4. Size:338K  cn sptech
njw0281g.pdf pdf_icon

NJW0281G

SPTECH Product SpecificationSPTECH Silicon NPN Power TransistorNJW0281GDESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V =250V(Min)(BR)CEOGood Linearity of hFEComplement to Type NJW0302GAPPLICATIONSDesigned for high fidelity audio amplifier andother linear applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltag

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
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