NJW0281G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NJW0281G  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 150 W

Tensión colector-base (Vcb): 250 V

Tensión colector-emisor (Vce): 250 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 15 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 30 MHz

Capacitancia de salida (Cc): 400 pF

Ganancia de corriente contínua (hFE): 75

Encapsulados: TO3P

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NJW0281G datasheet

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 njw0281g njw0302g.pdf pdf_icon

NJW0281G

NJW0281G (NPN) NJW0302G (PNP) Preferred Devices Complementary NPN-PNP Power Bipolar Transistors These complementary devices are lower power versions of the popular NJW3281G and NJW1302G audio output transistors. With http //onsemi.com superior gain linearity and safe operating area performance, these transistors are ideal for high fidelity audio amplifier output stages and 15 AMPERES

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 njw0281g.pdf pdf_icon

NJW0281G

Silicon NPN transistor Power Amplifier Applications Complementary to NJW0302G High collector voltage VCEO=230V (min) Recommended for 100-W high-fidelity audio frequency amplifier Output stage Note1 Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in

 ..3. Size:1183K  cn minos
 njw0281g.pdf pdf_icon

NJW0281G

NJW0281G Transistor SiliconNPNTripleDiffusedType NJW0281G Power Amplifier Applications ComplementarytoNJW0302G Highcollector voltage VCEO=230V (min) Recommendedfor 100-Whigh-fidelity audiofrequencyamplifier Output stage Note1 Usingcontinuouslyunder heavyloads (e.g. theapplication of hightemperature/current/voltageandthesignificant change intemperature, etc.) may causethis product

 ..4. Size:338K  cn sptech
 njw0281g.pdf pdf_icon

NJW0281G

SPTECH Product Specification SPTECH Silicon NPN Power Transistor NJW0281G DESCRIPTION High Collector-Emitter Breakdown Voltage- V =250V(Min) (BR)CEO Good Linearity of h FE Complement to Type NJW0302G APPLICATIONS Designed for high fidelity audio amplifier and other linear applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltag

MOSTRAR MÁS

Otros transistores... 2SC945P, C8050B, C8050C, C8050D, NE685M13, S8050MB, S8050MC, S8050MD, 2SD313, NJW0302G, 2SC5614, 2SC5800, 2SD2195, 2SD2398, 2SD2004, 2SA1193K, 129NT1A-1