All Transistors. NJW0281G Datasheet

 

NJW0281G Datasheet, Equivalent, Cross Reference Search


   Type Designator: NJW0281G
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 150 W
   Maximum Collector-Base Voltage |Vcb|: 250 V
   Maximum Collector-Emitter Voltage |Vce|: 250 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 30 MHz
   Collector Capacitance (Cc): 400 pF
   Forward Current Transfer Ratio (hFE), MIN: 75
   Noise Figure, dB: -
   Package: TO3P

 NJW0281G Transistor Equivalent Substitute - Cross-Reference Search

   

NJW0281G Datasheet (PDF)

 ..1. Size:80K  onsemi
njw0281g njw0302g.pdf

NJW0281G NJW0281G

NJW0281G (NPN)NJW0302G (PNP)Preferred DevicesComplementary NPN-PNPPower Bipolar TransistorsThese complementary devices are lower power versions of thepopular NJW3281G and NJW1302G audio output transistors. Withhttp://onsemi.comsuperior gain linearity and safe operating area performance, thesetransistors are ideal for high fidelity audio amplifier output stages and15 AMPERES

 ..2. Size:1183K  cn minos
njw0281g.pdf

NJW0281G NJW0281G

NJW0281GTransistor SiliconNPNTripleDiffusedTypeNJW0281GPower Amplifier Applications ComplementarytoNJW0302G Highcollector voltage:VCEO=230V (min) Recommendedfor 100-Whigh-fidelity audiofrequencyamplifierOutput stageNote1: Usingcontinuouslyunder heavyloads (e.g. theapplicationof hightemperature/current/voltageandthesignificant changeintemperature, etc.) may causethis product

 ..3. Size:338K  cn sptech
njw0281g.pdf

NJW0281G NJW0281G

SPTECH Product SpecificationSPTECH Silicon NPN Power TransistorNJW0281GDESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V =250V(Min)(BR)CEOGood Linearity of hFEComplement to Type NJW0302GAPPLICATIONSDesigned for high fidelity audio amplifier andother linear applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltag

 ..4. Size:213K  inchange semiconductor
njw0281g.pdf

NJW0281G NJW0281G

isc Silicon NPN Power Transistor NJW0281GDESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V =250V(Min)(BR)CEOGood Linearity of hFEComplement to Type NJW0302GMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high fidelity audio amplifier andother linear applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)

 0.1. Size:1784K  cn sps
njw0281gt4tl.pdf

NJW0281G NJW0281G

NJW0281GT4TLDESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V =250V(Min)(BR)CEOGood Linearity of hFEComplement to Type NJW0302GAPPLICATIONSDesigned for high fidelity audio amplifier andother linear applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 250 VCBOV Collector-Emitter Voltage 250 VCEOV Emitter

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , C3198 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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