NJW0281G Datasheet. Specs and Replacement
Type Designator: NJW0281G 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 250 V
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 30 MHz
Collector Capacitance (Cc): 400 pF
Forward Current Transfer Ratio (hFE), MIN: 75
Package: TO3P
📄📄 Copy
NJW0281G Substitution
- BJT ⓘ Cross-Reference Search
NJW0281G datasheet
NJW0281G (NPN) NJW0302G (PNP) Preferred Devices Complementary NPN-PNP Power Bipolar Transistors These complementary devices are lower power versions of the popular NJW3281G and NJW1302G audio output transistors. With http //onsemi.com superior gain linearity and safe operating area performance, these transistors are ideal for high fidelity audio amplifier output stages and 15 AMPERES ... See More ⇒
Silicon NPN transistor Power Amplifier Applications Complementary to NJW0302G High collector voltage VCEO=230V (min) Recommended for 100-W high-fidelity audio frequency amplifier Output stage Note1 Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in... See More ⇒
NJW0281G Transistor SiliconNPNTripleDiffusedType NJW0281G Power Amplifier Applications ComplementarytoNJW0302G Highcollector voltage VCEO=230V (min) Recommendedfor 100-Whigh-fidelity audiofrequencyamplifier Output stage Note1 Usingcontinuouslyunder heavyloads (e.g. theapplication of hightemperature/current/voltageandthesignificant change intemperature, etc.) may causethis product ... See More ⇒
SPTECH Product Specification SPTECH Silicon NPN Power Transistor NJW0281G DESCRIPTION High Collector-Emitter Breakdown Voltage- V =250V(Min) (BR)CEO Good Linearity of h FE Complement to Type NJW0302G APPLICATIONS Designed for high fidelity audio amplifier and other linear applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltag... See More ⇒
Detailed specifications: 2SC945P, C8050B, C8050C, C8050D, NE685M13, S8050MB, S8050MC, S8050MD, 2SD313, NJW0302G, 2SC5614, 2SC5800, 2SD2195, 2SD2398, 2SD2004, 2SA1193K, 129NT1A-1
Keywords - NJW0281G pdf specs
NJW0281G cross reference
NJW0281G equivalent finder
NJW0281G pdf lookup
NJW0281G substitution
NJW0281G replacement
BJT Parameters and How They Relate
History: 2N344 | 2N343A
🌐 : EN ES РУ
LIST
Last Update
BJT: ZDT6705 | GA1L4Z | GA1A4M | SBT42 | 2SA200-Y | 2SA200-O
Popular searches
k3599 transistor datasheet | 2sc1735 | transistor 2sc5200 | 2sb560 transistor | a1273 | c3421 transistor | c644 transistor | fgpf4536 datasheet





