3DA76 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 3DA76
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 7.5 W
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.75 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 70 MHz
Ganancia de corriente contínua (hfe): 10
Paquete / Cubierta: TO3
Búsqueda de reemplazo de 3DA76
3DA76 PDF detailed specifications
3da76 3da10a 3da96.pdf
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DA76, 3DA10A, 3DA96 NPN Silicon High Frequency High Power Transistor Features 1. Excellent second breakdown capacity. Good characteristic frequency. 2. Amplification factor of small current is great. Good voltage resistance. 3. Implementation of standards QZJ840611. GJB33 A-97, QZJ840611A also for 3DA9... See More ⇒
3da76.pdf
isc Silicon NPN Power Transistor 3DA76 DESCRIPTION High DC Current Gain- h = 15(Max) @I = 0.3A FE C Excellent Safe Operating Area Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as an output device in complementary audio amplifiers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector... See More ⇒
Otros transistores... 3DA10G , 3DA100A , 3DA100B , 3DA100C , 3DA100D , 3DA100E , 3DA101 , 3DA102 , 9014 , 3DA122 , 3DA41 , 3DA41A , 3DA41B , 3DA41C , 3DA450 , 3DA458 , 3DA4793 .
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
2sc1116 | 2n3565 equivalent | 10n60 | 2sc1061 | a1023 | d313 transistor | 2sa1302 | 2sd315


