3DA76 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 3DA76  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 7.5 W

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.75 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 70 MHz

Ganancia de corriente contínua (hFE): 10

Encapsulados: TO3

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3DA76 datasheet

 ..1. Size:31K  shaanxi
 3da76 3da10a 3da96.pdf pdf_icon

3DA76

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DA76, 3DA10A, 3DA96 NPN Silicon High Frequency High Power Transistor Features 1. Excellent second breakdown capacity. Good characteristic frequency. 2. Amplification factor of small current is great. Good voltage resistance. 3. Implementation of standards QZJ840611. GJB33 A-97, QZJ840611A also for 3DA9

 ..2. Size:249K  inchange semiconductor
 3da76.pdf pdf_icon

3DA76

isc Silicon NPN Power Transistor 3DA76 DESCRIPTION High DC Current Gain- h = 15(Max) @I = 0.3A FE C Excellent Safe Operating Area Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as an output device in complementary audio amplifiers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector

Otros transistores... 3DA10G, 3DA100A, 3DA100B, 3DA100C, 3DA100D, 3DA100E, 3DA101, 3DA102, 9014, 3DA122, 3DA41, 3DA41A, 3DA41B, 3DA41C, 3DA450, 3DA458, 3DA4793