3DA76 Datasheet. Specs and Replacement
Type Designator: 3DA76 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 7.5 W
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.75 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 70 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO3
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3DA76 datasheet
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DA76, 3DA10A, 3DA96 NPN Silicon High Frequency High Power Transistor Features 1. Excellent second breakdown capacity. Good characteristic frequency. 2. Amplification factor of small current is great. Good voltage resistance. 3. Implementation of standards QZJ840611. GJB33 A-97, QZJ840611A also for 3DA9... See More ⇒
isc Silicon NPN Power Transistor 3DA76 DESCRIPTION High DC Current Gain- h = 15(Max) @I = 0.3A FE C Excellent Safe Operating Area Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as an output device in complementary audio amplifiers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector... See More ⇒
Detailed specifications: 3DA10G, 3DA100A, 3DA100B, 3DA100C, 3DA100D, 3DA100E, 3DA101, 3DA102, 9014, 3DA122, 3DA41, 3DA41A, 3DA41B, 3DA41C, 3DA450, 3DA458, 3DA4793
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