3DA76 Datasheet, Equivalent, Cross Reference Search
Type Designator: 3DA76
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 7.5 W
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.75 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 70 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO3
3DA76 Transistor Equivalent Substitute - Cross-Reference Search
3DA76 Datasheet (PDF)
3da76 3da10a 3da96.pdf
Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DA76, 3DA10A, 3DA96 NPN Silicon High Frequency High Power Transistor Features: 1. Excellent second breakdown capacity. Good characteristic frequency. 2. Amplification factor of small current is great. Good voltage resistance. 3. Implementation of standards: QZJ840611. GJB33 A-97, QZJ840611A also for 3DA9
3da76.pdf
isc Silicon NPN Power Transistor 3DA76DESCRIPTIONHigh DC Current Gain-: h = 15(Max) @I = 0.3AFE CExcellent Safe Operating AreaMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as an output device in complementaryaudio amplifiersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
