All Transistors. 3DA76 Datasheet

 

3DA76 Datasheet and Replacement


   Type Designator: 3DA76
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 7.5 W
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.75 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 70 MHz
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO3
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3DA76 Datasheet (PDF)

 ..1. Size:31K  shaanxi
 3da76 3da10a 3da96.pdf pdf_icon

3DA76

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DA76, 3DA10A, 3DA96 NPN Silicon High Frequency High Power Transistor Features: 1. Excellent second breakdown capacity. Good characteristic frequency. 2. Amplification factor of small current is great. Good voltage resistance. 3. Implementation of standards: QZJ840611. GJB33 A-97, QZJ840611A also for 3DA9

 ..2. Size:249K  inchange semiconductor
 3da76.pdf pdf_icon

3DA76

isc Silicon NPN Power Transistor 3DA76DESCRIPTIONHigh DC Current Gain-: h = 15(Max) @I = 0.3AFE CExcellent Safe Operating AreaMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as an output device in complementaryaudio amplifiersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: BCY98 | SN270 | GES6004 | RN1114MFV | KTC3875S-G | BC548B | PT23T2222A

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