2SD601LT1 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD601LT1
Código: L6
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.23 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 45 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 150 MHz
Capacitancia de salida (Cc): 2.2 pF
Ganancia de corriente contínua (hfe): 135
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de 2SD601LT1
2SD601LT1 datasheet
2sd601lt1.pdf
2SD601LT1 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER,LOW LEVEL&LOW NOISE Package SOT-23 * Collector Current Ic= 100mA * Collector-Emitter Voltage Vce= 45V * High Total Power Dissipation Pc=225mW * High Hfe And Good Linearity ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating Unit Collector-Base Voltage Vcbo 50 V PIN 1 2 3 Collector-Emitter Voltage Vceo 45
2sd601a e.pdf
Transistor 2SD601A Silicon NPN epitaxial planer type For general amplification Unit mm Complementary to 2SB709A +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 1 Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packin
2sd601.pdf
Transistor 2SD601A Silicon NPN epitaxial planer type For general amplification Unit mm Complementary to 2SB709A +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 1 Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packin
2sd601a.pdf
2SD601A 0.1A , 60V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURE High forward current transfer ratio hFE A L Low collector to emitter saturation voltage VCE(sat) 3 3 Top View C B CLASSIFICATION OF hFE 1 1 2 2 K E Product-Rank 2SD601A-Q 2SD601A-R 2SD601A-S Ran
Otros transistores... 2SD669AL , 2SD669AM , 2SD669AM-A , 2SD669-B , 2SD669-C , 2SD669-D , 2SD468B , 2SD468C , A1015 , 2SD602LT1 , 2SD874AQ , 2SD874AR , 2SD874AS , 2SD874Q , 2SD874R , 2SD874S , 2SD882GP .
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
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