2SD601LT1 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD601LT1
Código: L6
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.23 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 45 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 150 MHz
Capacitancia de salida (Cc): 2.2 pF
Ganancia de corriente contínua (hfe): 135
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de transistor bipolar 2SD601LT1
2SD601LT1 Datasheet (PDF)
2sd601lt1.pdf
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2SD601LT1 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER,LOW LEVEL&LOW NOISE Package:SOT-23 * Collector Current: Ic= 100mA * Collector-Emitter Voltage:Vce= 45V * High Total Power Dissipation:Pc=225mW * High Hfe And Good Linearity ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating UnitCollector-Base Voltage Vcbo 50 V PIN: 1 2 3Collector-Emitter Voltage Vceo 45
2sd601a e.pdf
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Transistor2SD601ASilicon NPN epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SB709A+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).1Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packin
2sd601.pdf
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Transistor2SD601ASilicon NPN epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SB709A+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).1Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packin
2sd601a.pdf
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2SD601A 0.1A , 60V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURE High forward current transfer ratio hFE AL Low collector to emitter saturation voltage VCE(sat) 33Top ViewC BCLASSIFICATION OF hFE 11 22K EProduct-Rank 2SD601A-Q 2SD601A-R 2SD601A-S Ran
2sd601a.pdf
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2SD601A(BR3DG601AM) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features 2SB709A(BR3CG709AM)Complementary pair with 2SB709A(BR3CG709AM). / Applications General power amplifier applications / Equiva
2sd601a.pdf
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SMD Type TransistorsNPN Transistors2SD601ASOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.1 Features3 High hFE Low VCE(sat) For general amplification1 2+0.10.95-0.1 0.1+0.05-0.01 Complimentary to 2SB709A+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .