2SD601LT1 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD601LT1
SMD Transistor Code: L6
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.23 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 2.2 pF
Forward Current Transfer Ratio (hFE), MIN: 135
Noise Figure, dB: -
Package: SOT23
2SD601LT1 Transistor Equivalent Substitute - Cross-Reference Search
2SD601LT1 Datasheet (PDF)
2sd601lt1.pdf
2SD601LT1 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER,LOW LEVEL&LOW NOISE Package:SOT-23 * Collector Current: Ic= 100mA * Collector-Emitter Voltage:Vce= 45V * High Total Power Dissipation:Pc=225mW * High Hfe And Good Linearity ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating UnitCollector-Base Voltage Vcbo 50 V PIN: 1 2 3Collector-Emitter Voltage Vceo 45
2sd601a e.pdf
Transistor2SD601ASilicon NPN epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SB709A+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).1Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packin
2sd601.pdf
Transistor2SD601ASilicon NPN epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SB709A+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).1Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packin
2sd601a.pdf
2SD601A 0.1A , 60V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURE High forward current transfer ratio hFE AL Low collector to emitter saturation voltage VCE(sat) 33Top ViewC BCLASSIFICATION OF hFE 11 22K EProduct-Rank 2SD601A-Q 2SD601A-R 2SD601A-S Ran
2sd601a.pdf
2SD601A(BR3DG601AM) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features 2SB709A(BR3CG709AM)Complementary pair with 2SB709A(BR3CG709AM). / Applications General power amplifier applications / Equiva
2sd601a.pdf
SMD Type TransistorsNPN Transistors2SD601ASOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.1 Features3 High hFE Low VCE(sat) For general amplification1 2+0.10.95-0.1 0.1+0.05-0.01 Complimentary to 2SB709A+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
