A1270 Todos los transistores

A1270 PNP silicon APPLICATION GENERAL PURPOSE APPLICATION. MAXIMUM RATINGS Ta 25 PARAMETER SYMBOL RATING UNIT Collector-base voltage VCBO -35 V Collector-emitter voltage VCEO -30 V Emitter-base voltage VEBO -5 V Collector current IC -500 mA Collector Power Dissipation PC 625 mW Junction Temperature TJ 150 Storage Temperatur

MCC KTA1270-O Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 KTA1270-Y Phone (818) 701-4933 Fax (818) 701-4939 Features Halogen free available upon request by adding suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS PNP Compliant. See ordering information) Plastic-Encapsulate Epoxy meets

SEMICONDUCTOR KTA1270 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Excellent hFE Linearity hFE(2)=25(Min.) at VCE=-6V, IC=-400mA. Complementary to KTC3202. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO -35 V Collector-Base Voltage VCEO -30 V Collector-Emitter Voltage VEBO Emitter-Base Voltag

KTA1270(PNP) TO-92 Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Geenral purpose application switching application MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V Dimensions in inches and (millimeters) IC Collector Curren

Spec. No. C305A3 Issued Date 2013.01.16 CYStech Electronics Corp. Revised Date Page No. 1/6 General Purpose PNP Epitaxial Planar Transistor BTA1270A3 Description The BTA1270A3 is designed for using in driver stage of AF amplifier and general purpose amplification. Large IC , IC Max .= -0.6A Low VCE(sat), typically -0.09V at IC/IB = -100mA / -10mA. Ideal fo

SEMICONDUCTOR FTA1270 TECHNICAL DATA General Purpose Transistor B C PNP Silicon FEATURE DIM MILLIMETERS Complementary NPN Type available (FTC3202) A 4.70 MAX E B 4.80 MAX G C 3.70 MAX D D 0.55 MAX E 1.00 F 1.27 G 0.85 MAXIMUM RATINGS (TA=25 unless otherwise noted) H 0.45 _ H J 14.00 + 0.50 Symbol Parameter Value Units L 2.30 F F M 0.51 MAX VCBO Collector-Base V

DIP Type Transistors PNP Transistors KTA1270 Unit mm TO-92 4.8 0.3 3.8 0.3 Features Excellent hFE Linearity Complementary to KTC3202. 0.60 Max 0.45 0.1 0.5 2 1 3 1.Emitter 2.Collector 1.27 2.54 3.Base Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -35 Collector - Emitter Voltage VCEO -30 V Emitter