A1270 Datasheet and Replacement

A1270 PNP silicon APPLICATIONGENERAL PURPOSE APPLICATION.MAXIMUM RATINGSTa25PARAMETER SYMBOL RATING UNITCollector-base voltage VCBO -35 VCollector-emitter voltage VCEO -30 VEmitter-base voltage VEBO -5 VCollector current IC -500 mACollector Power Dissipation PC 625 mWJunction Temperature TJ 150Storage Temperatur

MCCKTA1270-OMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311KTA1270-YPhone: (818) 701-4933Fax: (818) 701-4939Features Halogen free available upon request by adding suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS PNPCompliant. See ordering information)Plastic-Encapsulate Epoxy meets

SEMICONDUCTOR KTA1270TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION. FEATURES Excellent hFE Linearity: hFE(2)=25(Min.) at VCE=-6V, IC=-400mA.Complementary to KTC3202.MAXIMUM RATING (Ta=25)CHARACTERISTIC SYMBOL RATING UNITVCBO -35 VCollector-Base VoltageVCEO -30 VCollector-Emitter VoltageVEBOEmitter-Base Voltag

KTA1270(PNP)TO-92 TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Geenral purpose application switching application MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V Dimensions in inches and (millimeters)IC Collector Curren

Spec. No. : C305A3 Issued Date : 2013.01.16 CYStech Electronics Corp.Revised Date : Page No. : 1/6 General Purpose PNP Epitaxial Planar Transistor BTA1270A3Description The BTA1270A3 is designed for using in driver stage of AF amplifier and general purpose amplification. Large IC , IC Max .= -0.6A Low VCE(sat), typically -0.09V at IC/IB = -100mA / -10mA. Ideal fo

SEMICONDUCTORFTA1270TECHNICAL DATAGeneral Purpose TransistorB CPNP SiliconFEATURE DIM MILLIMETERSComplementary NPN Type available (FTC3202) A 4.70 MAXEB 4.80 MAXGC 3.70 MAXDD 0.55 MAXE 1.00F 1.27G 0.85 MAXIMUM RATINGS (TA=25 unless otherwise noted) H 0.45_HJ 14.00 + 0.50Symbol Parameter Value Units L 2.30F FM 0.51 MAXVCBO Collector-Base V

DIP Type TransistorsPNP TransistorsKTA1270Unit:mmTO-924.8 0.3 3.8 0.3 Features Excellent hFE Linearity Complementary to KTC3202.0.60 Max0.45 0.1 0.521 31.Emitter2.Collector1.272.54 3.Base Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -35 Collector - Emitter Voltage VCEO -30 V Emitter