BFU580G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BFU580G  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1 W

Tensión colector-base (Vcb): 24 V

Tensión colector-emisor (Vce): 12 V

Tensión emisor-base (Veb): 2 V

Corriente del colector DC máxima (Ic): 0.03 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 11000 MHz

Capacitancia de salida (Cc): 1.1 pF

Ganancia de corriente contínua (hFE): 60

Encapsulados: SOT223

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BFU580G datasheet

 ..1. Size:317K  nxp
 bfu580g.pdf pdf_icon

BFU580G

BFU580G NPN wideband silicon RF transistor Rev. 1 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 4-pin SOT223 package. The BFU580G is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz. 1.2 Features and benef

 8.1. Size:294K  nxp
 bfu580q.pdf pdf_icon

BFU580G

BFU580Q NPN wideband silicon RF transistor Rev. 1 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 3-pin SOT89 package. The BFU580Q is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz. 1.2 Features and benefi

 8.2. Size:255K  inchange semiconductor
 bfu580q.pdf pdf_icon

BFU580G

isc Silicon NPN RF Transistor BFU580Q DESCRIPTION Low Noise Figure f = 8.5GHz TYP. @I = 30mA ; V = 8V; f= 900MHz T C CE High Gain S 2 =13dB TYP. @I = 30mA ; V = 8V; f= 900MHz 21 C CE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in low noise ,high-gain amplifiers and linear broadband amplifiers. ABSOLU

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