BFU580G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BFU580G
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1 W
Tensión colector-base (Vcb): 24 V
Tensión colector-emisor (Vce): 12 V
Tensión emisor-base (Veb): 2 V
Corriente del colector DC máxima (Ic): 0.03 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 11000 MHz
Capacitancia de salida (Cc): 1.1 pF
Ganancia de corriente contínua (hfe): 60
Paquete / Cubierta: SOT223
Búsqueda de reemplazo de transistor bipolar BFU580G
BFU580G Datasheet (PDF)
bfu580g.pdf
BFU580GNPN wideband silicon RF transistorRev. 1 28 April 2014 Product data sheet1. Product profile1.1 General descriptionNPN silicon microwave transistor for high speed, medium power applications in a plastic, 4-pin SOT223 package.The BFU580G is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.1.2 Features and benef
bfu580q.pdf
BFU580QNPN wideband silicon RF transistorRev. 1 28 April 2014 Product data sheet1. Product profile1.1 General descriptionNPN silicon microwave transistor for high speed, medium power applications in a plastic, 3-pin SOT89 package.The BFU580Q is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.1.2 Features and benefi
bfu580q.pdf
isc Silicon NPN RF Transistor BFU580QDESCRIPTIONLow Noise Figuref = 8.5GHz TYP. @I = 30mA ; V = 8V; f= 900MHzT C CEHigh GainS 2 =13dB TYP. @I = 30mA ; V = 8V; f= 900MHz21 C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in low noise ,high-gain amplifiers andlinear broadband amplifiers.ABSOLU
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