BFU580G Datasheet and Replacement
Type Designator: BFU580G
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 24 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 11000 MHz
Collector Capacitance (Cc): 1.1 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: SOT223
BFU580G Substitution
BFU580G Datasheet (PDF)
bfu580g.pdf

BFU580GNPN wideband silicon RF transistorRev. 1 28 April 2014 Product data sheet1. Product profile1.1 General descriptionNPN silicon microwave transistor for high speed, medium power applications in a plastic, 4-pin SOT223 package.The BFU580G is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.1.2 Features and benef
bfu580q.pdf

BFU580QNPN wideband silicon RF transistorRev. 1 28 April 2014 Product data sheet1. Product profile1.1 General descriptionNPN silicon microwave transistor for high speed, medium power applications in a plastic, 3-pin SOT89 package.The BFU580Q is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.1.2 Features and benefi
bfu580q.pdf

isc Silicon NPN RF Transistor BFU580QDESCRIPTIONLow Noise Figuref = 8.5GHz TYP. @I = 30mA ; V = 8V; f= 900MHzT C CEHigh GainS 2 =13dB TYP. @I = 30mA ; V = 8V; f= 900MHz21 C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in low noise ,high-gain amplifiers andlinear broadband amplifiers.ABSOLU
Datasheet: BFU530W , BFU530X , BFU530XR , BFU550 , BFU550A , BFU550W , BFU550X , BFU550XR , D880 , BFU580Q , BFU590G , BFU590Q , BFU730LX , BFU768F , BFU910F , BFW44CSM , BFW44DCSM .
History: 3DD4513_A6D
Keywords - BFU580G transistor datasheet
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History: 3DD4513_A6D



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