BFU580G Datasheet. Specs and Replacement
Type Designator: BFU580G 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 24 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 11000 MHz
Collector Capacitance (Cc): 1.1 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Package: SOT223
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BFU580G datasheet
BFU580G NPN wideband silicon RF transistor Rev. 1 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 4-pin SOT223 package. The BFU580G is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz. 1.2 Features and benef... See More ⇒
BFU580Q NPN wideband silicon RF transistor Rev. 1 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 3-pin SOT89 package. The BFU580Q is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz. 1.2 Features and benefi... See More ⇒
isc Silicon NPN RF Transistor BFU580Q DESCRIPTION Low Noise Figure f = 8.5GHz TYP. @I = 30mA ; V = 8V; f= 900MHz T C CE High Gain S 2 =13dB TYP. @I = 30mA ; V = 8V; f= 900MHz 21 C CE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in low noise ,high-gain amplifiers and linear broadband amplifiers. ABSOLU... See More ⇒
Detailed specifications: BFU530W, BFU530X, BFU530XR, BFU550, BFU550A, BFU550W, BFU550X, BFU550XR, 2N4401, BFU580Q, BFU590G, BFU590Q, BFU730LX, BFU768F, BFU910F, BFW44CSM, BFW44DCSM
Keywords - BFU580G pdf specs
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BJT Parameters and How They Relate
History: BFU550W
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