BFU590G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BFU590G  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 2 W

Tensión colector-base (Vcb): 24 V

Tensión colector-emisor (Vce): 12 V

Tensión emisor-base (Veb): 2 V

Corriente del colector DC máxima (Ic): 0.08 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 8500 MHz

Capacitancia de salida (Cc): 1.9 pF

Ganancia de corriente contínua (hFE): 60

Encapsulados: SOT223

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BFU590G datasheet

 ..1. Size:277K  nxp
 bfu590g.pdf pdf_icon

BFU590G

BFU590G NPN wideband silicon RF transistor Rev. 1 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 4-pin SOT223 package. The BFU590G is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz. 1.2 Features and benef

 8.1. Size:254K  nxp
 bfu590q.pdf pdf_icon

BFU590G

BFU590Q NPN wideband silicon RF transistor Rev. 1 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 3-pin SOT89 package. The BFU590Q is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz. 1.2 Features and benefi

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