All Transistors. BFU590G Datasheet

 

BFU590G Datasheet and Replacement


   Type Designator: BFU590G
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 2 W
   Maximum Collector-Base Voltage |Vcb|: 24 V
   Maximum Collector-Emitter Voltage |Vce|: 12 V
   Maximum Emitter-Base Voltage |Veb|: 2 V
   Maximum Collector Current |Ic max|: 0.08 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 8500 MHz
   Collector Capacitance (Cc): 1.9 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: SOT223
 

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BFU590G Datasheet (PDF)

 ..1. Size:277K  nxp
 bfu590g.pdf pdf_icon

BFU590G

BFU590GNPN wideband silicon RF transistorRev. 1 28 April 2014 Product data sheet1. Product profile1.1 General descriptionNPN silicon microwave transistor for high speed, medium power applications in a plastic, 4-pin SOT223 package.The BFU590G is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.1.2 Features and benef

 8.1. Size:254K  nxp
 bfu590q.pdf pdf_icon

BFU590G

BFU590QNPN wideband silicon RF transistorRev. 1 28 April 2014 Product data sheet1. Product profile1.1 General descriptionNPN silicon microwave transistor for high speed, medium power applications in a plastic, 3-pin SOT89 package.The BFU590Q is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.1.2 Features and benefi

Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SD2499 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

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