BFU590G Datasheet. Specs and Replacement

Type Designator: BFU590G  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 2 W

Maximum Collector-Base Voltage |Vcb|: 24 V

Maximum Collector-Emitter Voltage |Vce|: 12 V

Maximum Emitter-Base Voltage |Veb|: 2 V

Maximum Collector Current |Ic max|: 0.08 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 8500 MHz

Collector Capacitance (Cc): 1.9 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: SOT223

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BFU590G datasheet

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BFU590G

BFU590G NPN wideband silicon RF transistor Rev. 1 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 4-pin SOT223 package. The BFU590G is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz. 1.2 Features and benef... See More ⇒

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BFU590G

BFU590Q NPN wideband silicon RF transistor Rev. 1 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 3-pin SOT89 package. The BFU590Q is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz. 1.2 Features and benefi... See More ⇒

Detailed specifications: BFU530XR, BFU550, BFU550A, BFU550W, BFU550X, BFU550XR, BFU580G, BFU580Q, 2SC5198, BFU590Q, BFU730LX, BFU768F, BFU910F, BFW44CSM, BFW44DCSM, BFX34SMD, BFX34SMD05

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