MJH11017G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MJH11017G  📄📄 

Código: MJH11017

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 150 W

Tensión colector-base (Vcb): 150 V

Tensión colector-emisor (Vce): 150 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 15 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 3 MHz

Capacitancia de salida (Cc): 600 pF

Ganancia de corriente contínua (hFE): 400

Encapsulados: TO218 TO247

  📄📄 Copiar 

 Búsqueda de reemplazo de MJH11017G

- Selecciónⓘ de transistores por parámetros

 

MJH11017G datasheet

 ..1. Size:141K  onsemi
 mjh11017g.pdf pdf_icon

MJH11017G

MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) Complementary Darlington http //onsemi.com Silicon Power Transistors These devices are designed for use as general purpose amplifiers, 15 AMPERE DARLINGTON low frequency switching and motor control applications. COMPLEMENTARY SILICON Features POWER TRANSISTORS High DC Current Gain @ 10 Adc hFE = 400 Min (

 6.1. Size:212K  motorola
 mjh11017 mjh11018 mjh11019 mjh11020 mjh11021 mjh11022.pdf pdf_icon

MJH11017G

Order this document MOTOROLA by MJH11017/D SEMICONDUCTOR TECHNICAL DATA MJH10012 (See MJ10012) Complementary Darlington PNP Silicon Power Transistors * MJH11017 . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. MJH11019* High DC Current Gain @ 10 Adc hFE = 400 Min (All Types) Collector Emitter Sustaining Vo

 6.2. Size:222K  inchange semiconductor
 mjh11017.pdf pdf_icon

MJH11017G

isc Silicon PNP Darlington Power Transistor MJH11017 DESCRIPTION High DC Current Gain- h = 400(Min)@ I = -10A FE C Collector-Emitter Sustaining Voltage- V = -150V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = -2.5V(Max)@ I = -10A CE(sat) C = -4.0V(Max)@ I = -15A C Complement to Type MJH11018 Minimum Lot-to-Lot variations for robust device performance

 7.1. Size:141K  onsemi
 mjh11019g.pdf pdf_icon

MJH11017G

MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) Complementary Darlington http //onsemi.com Silicon Power Transistors These devices are designed for use as general purpose amplifiers, 15 AMPERE DARLINGTON low frequency switching and motor control applications. COMPLEMENTARY SILICON Features POWER TRANSISTORS High DC Current Gain @ 10 Adc hFE = 400 Min (

MOSTRAR MÁS

Otros transistores... MJF31CG, MJF32CG, MJF44H11G, MJF45H11G, MJF47G, MJF6388G, MJF6668, MJF6668G, 2N5551, MJH11019G, MJH11020G, MJH11021G, MJH11022G, MJH16010, MJH16010A, MJH16012, MJH16018