MJH11017G Specs and Replacement
Type Designator: MJH11017G
SMD Transistor Code: MJH11017
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 3 MHz
Collector Capacitance (Cc): 600 pF
Forward Current Transfer Ratio (hFE), MIN: 400
Noise Figure, dB: -
Package: TO218 TO247
MJH11017G Transistor Equivalent Substitute - Cross-Reference Search
MJH11017G detailed specifications
mjh11017g.pdf
MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) Complementary Darlington http //onsemi.com Silicon Power Transistors These devices are designed for use as general purpose amplifiers, 15 AMPERE DARLINGTON low frequency switching and motor control applications. COMPLEMENTARY SILICON Features POWER TRANSISTORS High DC Current Gain @ 10 Adc hFE = 400 Min (... See More ⇒
mjh11017 mjh11018 mjh11019 mjh11020 mjh11021 mjh11022.pdf
Order this document MOTOROLA by MJH11017/D SEMICONDUCTOR TECHNICAL DATA MJH10012 (See MJ10012) Complementary Darlington PNP Silicon Power Transistors * MJH11017 . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. MJH11019* High DC Current Gain @ 10 Adc hFE = 400 Min (All Types) Collector Emitter Sustaining Vo... See More ⇒
mjh11017.pdf
isc Silicon PNP Darlington Power Transistor MJH11017 DESCRIPTION High DC Current Gain- h = 400(Min)@ I = -10A FE C Collector-Emitter Sustaining Voltage- V = -150V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = -2.5V(Max)@ I = -10A CE(sat) C = -4.0V(Max)@ I = -15A C Complement to Type MJH11018 Minimum Lot-to-Lot variations for robust device performance... See More ⇒
mjh11019g.pdf
MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) Complementary Darlington http //onsemi.com Silicon Power Transistors These devices are designed for use as general purpose amplifiers, 15 AMPERE DARLINGTON low frequency switching and motor control applications. COMPLEMENTARY SILICON Features POWER TRANSISTORS High DC Current Gain @ 10 Adc hFE = 400 Min (... See More ⇒
Detailed specifications: MJF31CG , MJF32CG , MJF44H11G , MJF45H11G , MJF47G , MJF6388G , MJF6668 , MJF6668G , 2N5551 , MJH11019G , MJH11020G , MJH11021G , MJH11022G , MJH16010 , MJH16010A , MJH16012 , MJH16018 .
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