MJL21193G
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJL21193G
Código: MJL21193
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 200
W
Tensión colector-base (Vcb): 400
V
Tensión colector-emisor (Vce): 250
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 16
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 4
MHz
Capacitancia de salida (Cc): 500
pF
Ganancia de corriente contínua (hfe): 25
Paquete / Cubierta:
TO264
Búsqueda de reemplazo de transistor bipolar MJL21193G
MJL21193G
Datasheet (PDF)
..1. Size:120K onsemi
mjl21193g.pdf 
MJL21193 (PNP),MJL21194 (NPN)Silicon Power TransistorsThe MJL21193 and MJL21194 utilize Perforated Emittertechnology and are specifically designed for high power audio output,disk head positioners and linear applications.http://onsemi.comFeatures Total Harmonic Distortion Characterized16 AMPERE COMPLEMENTARY High DC Current GainSILICON POWER Excellent Gain Linea
6.1. Size:159K motorola
mjl21193 mjl21194.pdf
Order this documentMOTOROLAby MJL21193/DSEMICONDUCTOR TECHNICAL DATAPNPMJL21193*NPNSilicon Power Transistors*MJL21194The MJL21193 and MJL21194 utilize Perforated Emitter technology and are*Motorola Preferred Devicespecifically designed for high power audio output, disk head positioners and linearapplications. 16 AMPERECOMPLEMENTARY Total Harmonic Distortion Char
6.2. Size:116K onsemi
mjl21193 mjl21194.pdf
MJL21193 (PNP),MJL21194 (NPN)Silicon Power TransistorsThe MJL21193 and MJL21194 utilize Perforated Emittertechnology and are specifically designed for high power audio output,disk head positioners and linear applications.http://onsemi.comFeatures Total Harmonic Distortion Characterized16 AMPERE COMPLEMENTARY High DC Current GainSILICON POWER Excellent Gain Linea
6.3. Size:1309K jilin sino
mjl21194 mjl21193.pdf
Complementary NPN-PNP Power Bipolar Transistor R MJL21194(NPN) MJL21193(PNP) APPLICATIONS High fidelity audio amplifier and other linear applications FEATURES V =250V (min) High collector voltageV =250V (min) CEO CEONPN-PNP Complementary NPN-P
6.4. Size:173K cn sptech
mjl21193.pdf
SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor MJL21193DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V(BR)CEO= -250V(Min)High DC Current Gain hFE = 25 Min @ IC = 8 AdcComplement to Type MJL21194APPLICATIONSPerforated Emitter technologyhigh power audio output, disk head positionerslinear applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL
6.5. Size:216K inchange semiconductor
mjl21193.pdf
isc Silicon PNP Power Transistor MJL21193DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V(BR)CEO= -250V(Min)High DC Current Gain hFE = 25 Min @ IC = 8 AdcComplement to Type MJL21194Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPerforated Emitter technologyhigh power audio output, disk head positionerslinear ap
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