MJL21193G
Datasheet, Equivalent, Cross Reference Search
Type Designator: MJL21193G
SMD Transistor Code: MJL21193
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 200
W
Maximum Collector-Base Voltage |Vcb|: 400
V
Maximum Collector-Emitter Voltage |Vce|: 250
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 16
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 4
MHz
Collector Capacitance (Cc): 500
pF
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package:
TO264
MJL21193G
Transistor Equivalent Substitute - Cross-Reference Search
MJL21193G
Datasheet (PDF)
..1. Size:120K onsemi
mjl21193g.pdf
MJL21193 (PNP),MJL21194 (NPN)Silicon Power TransistorsThe MJL21193 and MJL21194 utilize Perforated Emittertechnology and are specifically designed for high power audio output,disk head positioners and linear applications.http://onsemi.comFeatures Total Harmonic Distortion Characterized16 AMPERE COMPLEMENTARY High DC Current GainSILICON POWER Excellent Gain Linea
6.1. Size:159K motorola
mjl21193 mjl21194.pdf
Order this documentMOTOROLAby MJL21193/DSEMICONDUCTOR TECHNICAL DATAPNPMJL21193*NPNSilicon Power Transistors*MJL21194The MJL21193 and MJL21194 utilize Perforated Emitter technology and are*Motorola Preferred Devicespecifically designed for high power audio output, disk head positioners and linearapplications. 16 AMPERECOMPLEMENTARY Total Harmonic Distortion Char
6.2. Size:116K onsemi
mjl21193 mjl21194.pdf
MJL21193 (PNP),MJL21194 (NPN)Silicon Power TransistorsThe MJL21193 and MJL21194 utilize Perforated Emittertechnology and are specifically designed for high power audio output,disk head positioners and linear applications.http://onsemi.comFeatures Total Harmonic Distortion Characterized16 AMPERE COMPLEMENTARY High DC Current GainSILICON POWER Excellent Gain Linea
6.3. Size:1309K jilin sino
mjl21194 mjl21193.pdf
Complementary NPN-PNP Power Bipolar Transistor R MJL21194(NPN) MJL21193(PNP) APPLICATIONS High fidelity audio amplifier and other linear applications FEATURES V =250V (min) High collector voltageV =250V (min) CEO CEONPN-PNP Complementary NPN-P
6.4. Size:173K cn sptech
mjl21193.pdf
SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor MJL21193DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V(BR)CEO= -250V(Min)High DC Current Gain hFE = 25 Min @ IC = 8 AdcComplement to Type MJL21194APPLICATIONSPerforated Emitter technologyhigh power audio output, disk head positionerslinear applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL
6.5. Size:216K inchange semiconductor
mjl21193.pdf
isc Silicon PNP Power Transistor MJL21193DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V(BR)CEO= -250V(Min)High DC Current Gain hFE = 25 Min @ IC = 8 AdcComplement to Type MJL21194Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPerforated Emitter technologyhigh power audio output, disk head positionerslinear ap
Datasheet: 2SA1771
, 2SA178
, 2SA1790
, 2SA1791
, 2SA1792
, 2SA1793
, 2SA1794
, 2SA1795
, BC557
, 2SA1799
, 2SA17H
, 2SA18
, 2SA180
, 2SA1800
, 2SA1800O
, 2SA1800R
, 2SA1800Y
.