MJL21193G Datasheet PDF and Equivalents Search

 ..1. Size:120K  onsemi

 mjl21193g.pdf

MJL21193 (PNP), MJL21194 (NPN) Silicon Power Transistors The MJL21193 and MJL21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http //onsemi.com Features Total Harmonic Distortion Characterized 16 AMPERE COMPLEMENTARY High DC Current Gain SILICON POWER Excellent Gain Linea... See More ⇒

 6.1. Size:159K  motorola

 mjl21193 mjl21194.pdf

Order this document MOTOROLA by MJL21193/D SEMICONDUCTOR TECHNICAL DATA PNP MJL21193* NPN Silicon Power Transistors * MJL21194 The MJL21193 and MJL21194 utilize Perforated Emitter technology and are *Motorola Preferred Device specifically designed for high power audio output, disk head positioners and linear applications. 16 AMPERE COMPLEMENTARY Total Harmonic Distortion Char... See More ⇒

 6.2. Size:116K  onsemi

 mjl21193 mjl21194.pdf

MJL21193 (PNP), MJL21194 (NPN) Silicon Power Transistors The MJL21193 and MJL21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http //onsemi.com Features Total Harmonic Distortion Characterized 16 AMPERE COMPLEMENTARY High DC Current Gain SILICON POWER Excellent Gain Linea... See More ⇒

 6.3. Size:1309K  jilin sino

 mjl21194 mjl21193.pdf

Complementary NPN-PNP Power Bipolar Transistor R MJL21194(NPN) MJL21193(PNP) APPLICATIONS High fidelity audio amplifier and other linear applications FEATURES V =250V (min) High collector voltage V =250V (min) CEO CEO NPN-PNP Complementary NPN-P... See More ⇒

 6.4. Size:173K  cn sptech

 mjl21193.pdf

SPTECH Product Specification SPTECH Silicon PNP Power Transistor MJL21193 DESCRIPTION High Collector-Emitter Breakdown Voltage- V(BR)CEO= -250V(Min) High DC Current Gain hFE = 25 Min @ IC = 8 Adc Complement to Type MJL21194 APPLICATIONS Perforated Emitter technology high power audio output, disk head positioners linear applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL... See More ⇒

 6.5. Size:216K  inchange semiconductor

 mjl21193.pdf

isc Silicon PNP Power Transistor MJL21193 DESCRIPTION High Collector-Emitter Breakdown Voltage- V(BR)CEO= -250V(Min) High DC Current Gain hFE = 25 Min @ IC = 8 Adc Complement to Type MJL21194 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Perforated Emitter technology high power audio output, disk head positioners linear ap... See More ⇒