2N3636L
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N3636L
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 5
W
Tensión colector-base (Vcb): 175
V
Tensión colector-emisor (Vce): 175
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 1
A
Temperatura operativa máxima (Tj): 200
°C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 10
pF
Ganancia de corriente contínua (hfe): 50
Paquete / Cubierta:
TO5
Búsqueda de reemplazo de transistor bipolar 2N3636L
2N3636L
Datasheet (PDF)
..1. Size:227K microsemi
2n3636l.pdf 

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/357 DEVICES LEVELS JANSM 3K Rads (Si) 2N3634 2N3635 2N3636 2N3637 JANSD 10K Rads (Si) 2N3634L 2N3635L 2N3636L 2N3637L JANSP 30K Rads (Si)
8.1. Size:219K bocasemi
2n3634 2n3635 2n3636 2n3637.pdf 

Boca Semiconductor Corp. BSC http //www.bocasemi.com http //www.bocasemi.com http //www.bocasemi.com http //www.bocasemi.com http //www.bocasemi.com http //www.bocasemi.com http //www.bocasemi.com
8.2. Size:227K microsemi
2n3636ub.pdf 

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/357 DEVICES LEVELS JANSM 3K Rads (Si) 2N3634 2N3635 2N3636 2N3637 JANSD 10K Rads (Si) 2N3634L 2N3635L 2N3636L 2N3637L JANSP 30K Rads (Si)
9.1. Size:87K central
2n3634 2n3635.pdf 

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824
9.2. Size:32K semelab
2n3637dcsm.pdf 

2N3637DCSM MECHANICAL DATA DUAL PNP SILICON TRANSISTORS Dimensions in mm (inches) IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS 1.40 0.15 2.29 0.20 1.65 0.13 (0.055 0.006) (0.09 0.008) (0.065 0.005) FEATURES 2 3 High Voltage Switching 1 4 A Low Power Amplifier Applications 0.23 6 5 rad. (0.009) Herme
9.3. Size:32K semelab
2n3634csm.pdf 

2N3634CSM MECHANICAL DATA PNP SILICON TRANSISTOR IN A Dimensions in mm (inches) HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR 0.51 0.10 (0.02 0.004) 0.31 HIGH RELIABILITY APPLICATIONS rad. (0.012) 3 FEATURES 21 High Voltage Switching 1.91 0.10 Low Power Amplifier Applications (0.075 0.004) A 0.31 rad. Hermetic Ceramic Surface Mount (0.012) 3.
9.4. Size:18K semelab
2n3637csm.pdf 

2N3637CSM MECHANICAL DATA PNP SILICON TRANSISTOR IN A Dimensions in mm (inches) HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS 0.51 0.10 (0.02 0.004) 0.31 rad. (0.012) 3 FEATURES 21 High Voltage Switching Low Power Amplifier Applications 1.91 0.10 (0.075 0.004) A 0.31 rad. Hermetic Ceramic Surface Mount (0.012)
9.5. Size:247K cdil
2n3635 6 7.pdf 

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR RF TRANSISTORS 2N3635 2N3636 2N3637 TO-39 Metal Can Package 2N3635 and 2N3637 Are PNP Silicon Transistros For High Voltage Switching and Low Power Amplifier. ABSOLUTE MAXIMUM RATINGS (Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL 2N3635 2N3636, 37 UNITS Collector E
9.6. Size:227K microsemi
2n3635ub.pdf 

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/357 DEVICES LEVELS JANSM 3K Rads (Si) 2N3634 2N3635 2N3636 2N3637 JANSD 10K Rads (Si) 2N3634L 2N3635L 2N3636L 2N3637L JANSP 30K Rads (Si)
9.7. Size:227K microsemi
2n3637ub.pdf 

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/357 DEVICES LEVELS JANSM 3K Rads (Si) 2N3634 2N3635 2N3636 2N3637 JANSD 10K Rads (Si) 2N3634L 2N3635L 2N3636L 2N3637L JANSP 30K Rads (Si)
9.8. Size:169K microsemi
2n3637l.pdf 

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Tel +353 (0) 65 6840044 Fax +353 (0) 65 6822298 Website http //www.microsemi.com PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/357 DEVICES LEVELS 2N3634 2N3635 2N3636 2N3637 JAN 2N3634L 2N3635L 2N3636L 2
9.9. Size:227K microsemi
2n3634l.pdf 

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/357 DEVICES LEVELS JANSM 3K Rads (Si) 2N3634 2N3635 2N3636 2N3637 JANSD 10K Rads (Si) 2N3634L 2N3635L 2N3636L 2N3637L JANSP 30K Rads (Si)
9.10. Size:227K microsemi
2n3635l.pdf 

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/357 DEVICES LEVELS JANSM 3K Rads (Si) 2N3634 2N3635 2N3636 2N3637 JANSD 10K Rads (Si) 2N3634L 2N3635L 2N3636L 2N3637L JANSP 30K Rads (Si)
9.11. Size:227K microsemi
2n3634ub.pdf 

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/357 DEVICES LEVELS JANSM 3K Rads (Si) 2N3634 2N3635 2N3636 2N3637 JANSD 10K Rads (Si) 2N3634L 2N3635L 2N3636L 2N3637L JANSP 30K Rads (Si)
Otros transistores... 2N3507AL
, 2N3509CSM
, 2N3509DCSM
, 2N3634CSM
, 2N3634L
, 2N3634UB
, 2N3635L
, 2N3635UB
, A1013
, 2N3636UB
, 2N3637CSM
, 2N3637DCSM
, 2N3637L
, 2N3637UB
, 2N3700HR
, 2N3713SMD
, 2N3714SMD
.
History: DTA015EM
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| 2SD23
| 2SC2905
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| K2122B