All Transistors. 2N3636L Datasheet

 

2N3636L Datasheet, Equivalent, Cross Reference Search

Type Designator: 2N3636L

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 5 W

Maximum Collector-Base Voltage |Vcb|: 175 V

Maximum Collector-Emitter Voltage |Vce|: 175 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 200 °C

Collector Capacitance (Cc): 10 pF

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: TO5

2N3636L Transistor Equivalent Substitute - Cross-Reference Search

 

2N3636L Datasheet (PDF)

0.1. 2n3636l.pdf Size:227K _microsemi

2N3636L
2N3636L

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/357 DEVICES LEVELS JANSM 3K Rads (Si) 2N3634 2N3635 2N3636 2N3637JANSD 10K Rads (Si) 2N3634L 2N3635L 2N3636L 2N3637LJANSP 30K Rads (Si)

8.1. 2n3634 2n3635 2n3636 2n3637.pdf Size:219K _bocasemi

2N3636L
2N3636L

Boca Semiconductor Corp. BSC http://www.bocasemi.comhttp://www.bocasemi.comhttp://www.bocasemi.comhttp://www.bocasemi.comhttp://www.bocasemi.comhttp://www.bocasemi.comhttp://www.bocasemi.com

8.2. 2n3636ub.pdf Size:227K _microsemi

2N3636L
2N3636L

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/357 DEVICES LEVELS JANSM 3K Rads (Si) 2N3634 2N3635 2N3636 2N3637JANSD 10K Rads (Si) 2N3634L 2N3635L 2N3636L 2N3637LJANSP 30K Rads (Si)

Datasheet: BC507FA , BC507FB , BC508 , BC508A , BC508B , BC508C , BC508F , BC508FA , D882 , BC508FC , BC509 , BC509B , BC509C , BC509F , BC509FB , BC509FC , BC510 .

 

 
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