2N5665N1
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N5665N1
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 76
W
Tensión colector-base (Vcb): 400
V
Tensión colector-emisor (Vce): 300
V
Tensión emisor-base (Veb): 6
V
Corriente del colector DC máxima (Ic): 5
A
Temperatura operativa máxima (Tj): 200
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 20
MHz
Capacitancia de salida (Cc): 120
pF
Ganancia de corriente contínua (hfe): 25
Paquete / Cubierta:
TO-276AA
Búsqueda de reemplazo de transistor bipolar 2N5665N1
2N5665N1
Datasheet (PDF)
..1. Size:341K semelab
2n5665n1.pdf 
NPN POWER SILICON SWITCHING TRANSISTOR 2N5665N1 Hermetic SMD0.5 Ceramic Surface Mount. Ideally Suited for Power Amplifier and Switching Applications. Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VCBO Collector Base Voltage 400V VCEO Collector Emitter Voltage 300V VEBO Emitter Base Voltage 6V IC Cont
8.1. Size:10K semelab
2n5665smd.pdf
2N5665SMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 300V IC = 3A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (
8.2. Size:127K inchange semiconductor
2n5664 2n5665.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5664 2N5665 DESCRIPTION With TO-66 package High breakdown voltage APPLICATIONS High speed switching and linear amplifier High-voltage operational amplifiers Switching regulators ,converters Deflection stages and high fidelity amplifers PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 Em
8.3. Size:221K inchange semiconductor
2n5665.pdf
isc Silicon NPN Power Transistor 2N5665DESCRIPTIONCollector-Emitter Breakdown Voltage-: V =300V(Min)CEOMinimum Lot-to-Lot variations for robust devicePerformance and reliable operationAPPLICATIONSPower amplifier and switching applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)UNISYMBOL PARAMETER VALUETV Collector-Base Voltage 400 VCBOV Collector-Emitter Voltage 30
Otros transistores... 2N3200
, 2N3201
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, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
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