2N5665N1 Datasheet, Equivalent, Cross Reference Search

   Type Designator: 2N5665N1
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 76 W
   Maximum Collector-Base Voltage |Vcb|: 400 V
   Maximum Collector-Emitter Voltage |Vce|: 300 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 20 MHz
   Collector Capacitance (Cc): 120 pF
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO-276AA

2N5665N1 Transistor Equivalent Substitute - Cross-Reference Search

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