2N5665N1 - аналоги, параметры транзистора - Справочник транзисторов

2N5665N1 - технические параметры

..1. Size:341K semelab
2n5665n1.pdf pdf_icon

NPN POWER SILICON SWITCHING TRANSISTOR 2N5665N1 Hermetic SMD0.5 Ceramic Surface Mount. Ideally Suited for Power Amplifier and Switching Applications. Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise stated) VCBO Collector Base Voltage 400V VCEO Collector Emitter Voltage 300V VEBO Emitter Base Voltage 6V IC Cont

8.1. Size:10K semelab
2n5665smd.pdf pdf_icon

2N5665SMD Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 300V IC = 3A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 (

8.2. Size:127K inchange semiconductor
2n5664 2n5665.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5664 2N5665 DESCRIPTION With TO-66 package High breakdown voltage APPLICATIONS High speed switching and linear amplifier High-voltage operational amplifiers Switching regulators ,converters Deflection stages and high fidelity amplifers PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Em

8.3. Size:221K inchange semiconductor
2n5665.pdf pdf_icon

isc Silicon NPN Power Transistor 2N5665 DESCRIPTION Collector-Emitter Breakdown Voltage- V =300V(Min) CEO Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) UNI SYMBOL PARAMETER VALUE T V Collector-Base Voltage 400 V CBO V Collector-Emitter Voltage 30

Другие транзисторы... 2N5551N , 2N5551SC , 2N5655G , 2N5657G , 2N5660U3 , 2N5661U3 , 2N5664SMD , 2N5664SMD05 , BD135 , 2N5665SMD , 2N5666S , 2N5666SMD , 2N5666SMD05 , 2N5666U3 , 2N5667N1 , 2N5667S , 2N5681SMD05 .