BFG10X Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BFG10X  📄📄 

Código: *MT_N71

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.4 W

Tensión colector-base (Vcb): 20 V

Tensión colector-emisor (Vce): 8 V

Tensión emisor-base (Veb): 2.5 V

Corriente del colector DC máxima (Ic): 0.25 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 1900 MHz

Capacitancia de salida (Cc): 3 pF

Ganancia de corriente contínua (hFE): 25

Encapsulados: SOT143

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BFG10X datasheet

 ..1. Size:257K  philips
 bfg10x n.pdf pdf_icon

BFG10X

BFG10; BFG10/X NPN 2 GHz RF power transistor Rev. 05 22 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown

 ..2. Size:59K  philips
 bfg10 bfg10x 4.pdf pdf_icon

BFG10X

DISCRETE SEMICONDUCTORS DATA SHEET BFG10; BFG10/X NPN 2 GHz RF power transistor 1995 Aug 31 Product specification Supersedes data of 1995 Mar 07 File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 2 GHz RF power transistor BFG10; BFG10/X FEATURES PINNING High power gain PIN DESCRIPTION High efficiency BFG10 (see Fig.1) handbook, 2 co

 ..3. Size:255K  nxp
 bfg10x.pdf pdf_icon

BFG10X

BFG10; BFG10/X NPN 2 GHz RF power transistor Rev. 05 22 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown

 9.1. Size:240K  philips
 bfg10wx.pdf pdf_icon

BFG10X

DISCRETE SEMICONDUCTORS DATA SHEET BFG10W/X UHF power transistor Product specification 1995 Sep 22 NXP Semiconductors Product specification UHF power transistor BFG10W/X FEATURES DESCRIPTION High efficiency NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin Small size discrete power amplifier lfpage 4 3 dual-emitter SOT343N package. 900 MHz an

MOSTRAR MÁS

Otros transistores... BF257DCSM, BF258DCSM, BF422G, BF720T1G, BF721T1G, BF748, BF822W, BFG10WX, 2N3906, BFG520XR, BFR92AC1A, BFR92C1A, BFT29X, BFT30CSM, BFT30DCSM, BFT32A, BFT33A