BFG10X . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BFG10X
Código: *MT_N71
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.4 W
Tensión colector-base (Vcb): 20 V
Tensión colector-emisor (Vce): 8 V
Tensión emisor-base (Veb): 2.5 V
Corriente del colector DC máxima (Ic): 0.25 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 1900 MHz
Capacitancia de salida (Cc): 3 pF
Ganancia de corriente contínua (hfe): 25
Paquete / Cubierta: SOT143
Búsqueda de reemplazo de transistor bipolar BFG10X
BFG10X Datasheet (PDF)
bfg10x n.pdf
BFG10; BFG10/XNPN 2 GHz RF power transistorRev. 05 22 November 2007 Product data sheetIMPORTANT NOTICEDear customer,As from October 1st, 2006 Philips Semiconductors has a new trade name- NXP Semiconductors, which will be used in future data sheets together with new contactdetails.In data sheets where the previous Philips references remain, please use the new links asshown
bfg10 bfg10x 4.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBFG10; BFG10/XNPN 2 GHz RF power transistor1995 Aug 31Product specificationSupersedes data of 1995 Mar 07File under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN 2 GHz RF power transistor BFG10; BFG10/XFEATURES PINNING High power gainPIN DESCRIPTION High efficiencyBFG10 (see Fig.1)handbook, 2 co
bfg10x.pdf
BFG10; BFG10/XNPN 2 GHz RF power transistorRev. 05 22 November 2007 Product data sheetIMPORTANT NOTICEDear customer,As from October 1st, 2006 Philips Semiconductors has a new trade name- NXP Semiconductors, which will be used in future data sheets together with new contactdetails.In data sheets where the previous Philips references remain, please use the new links asshown
bfg10wx.pdf
DISCRETE SEMICONDUCTORS DATA SHEETBFG10W/XUHF power transistorProduct specification 1995 Sep 22NXP Semiconductors Product specificationUHF power transistor BFG10W/XFEATURES DESCRIPTION High efficiency NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin Small size discrete power amplifier lfpage4 3dual-emitter SOT343N package. 900 MHz an
bfg10wx 1.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBFG10W/XUHF power transistor1995 Sep 22Product specificationFile under Discrete Semiconductors, SC14Philips Semiconductors Product specificationUHF power transistor BFG10W/XFEATURES DESCRIPTION High efficiency NPN silicon planar epitaxial transistorencapsulated in a plastic, 4-pinfpage Small size discrete power amplifier 4 3dua
bfg10wx.pdf
DISCRETE SEMICONDUCTORS DATA SHEETBFG10W/XUHF power transistorProduct specification 1995 Sep 22NXP Semiconductors Product specificationUHF power transistor BFG10W/XFEATURES DESCRIPTION High efficiency NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin Small size discrete power amplifier lfpage4 3dual-emitter SOT343N package. 900 MHz an
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