MBT35200MT1G Todos los transistores

 

MBT35200MT1G Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MBT35200MT1G
   Código: G4
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.625 W
   Tensión colector-base (Vcb): 55 V
   Tensión colector-emisor (Vce): 35 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 2 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 85 pF
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: SOT-457

 Búsqueda de reemplazo de transistor bipolar MBT35200MT1G

 

Principales características: MBT35200MT1G

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MBT35200MT1G

MBT35200MT1, SMBT35200MT1G High Current Surface Mount PNP Silicon Switching Transistor for Load Management http //onsemi.com in Portable Applications 35 VOLTS Features 2.0 AMPS AEC-Q101 Qualified and PPAP Capable PNP TRANSISTOR S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements Pb-Free Packages are Available* MAXIM

 0.1. Size:152K  onsemi
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MBT35200MT1G

MBT35200MT1, SMBT35200MT1G High Current Surface Mount PNP Silicon Switching Transistor for Load Management http //onsemi.com in Portable Applications 35 VOLTS Features 2.0 AMPS AEC-Q101 Qualified and PPAP Capable PNP TRANSISTOR S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements Pb-Free Packages are Available* MAXIM

 3.1. Size:64K  onsemi
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MBT35200MT1G

MBT35200MT1 High Current Surface Mount PNP Silicon Switching Transistor for Load Management in http //onsemi.com Portable Applications 35 VOLTS 2.0 AMPS MAXIMUM RATINGS (TA = 25 C) PNP TRANSISTOR Rating Symbol Max Unit Collector-Emitter Voltage VCEO -35 Vdc COLLECTOR Collector-Base Voltage VCBO -55 Vdc 1, 2, 5, 6 Emitter-Base Voltage VEBO -5.0 Vdc Collector Current - Continuou

 3.2. Size:178K  onsemi
 mbt35200mt1.pdf pdf_icon

MBT35200MT1G

MBT35200MT1 High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications http //onsemi.com Features 35 VOLTS AEC-Q101 Qualified and PPAP Capable 2.0 AMPS S Prefix for Automotive and Other Applications Requiring Unique PNP TRANSISTOR Site and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and a

MOSTRAR MÁS

Otros transistores... M8050-C , M8050-D , M8050S , M8550S , MA42 , MA92 , MAG9413 , MBT2222ADW1T1G , C1815 , MBT3904DW1T3G , MBT3906DW1T2G , MBT3946DW1T2G , MBT6517LT1 , MBTA06LT1 , RT3A66M , RT3A77M , RT3C66M .

 

 
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