MBT35200MT1G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MBT35200MT1G  📄📄 

Código: G4

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.625 W

Tensión colector-base (Vcb): 55 V

Tensión colector-emisor (Vce): 35 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Capacitancia de salida (Cc): 85 pF

Ganancia de corriente contínua (hFE): 100

Encapsulados: SOT-457

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MBT35200MT1G datasheet

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MBT35200MT1G

MBT35200MT1, SMBT35200MT1G High Current Surface Mount PNP Silicon Switching Transistor for Load Management http //onsemi.com in Portable Applications 35 VOLTS Features 2.0 AMPS AEC-Q101 Qualified and PPAP Capable PNP TRANSISTOR S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements Pb-Free Packages are Available* MAXIM

 0.1. Size:152K  onsemi
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MBT35200MT1G

MBT35200MT1, SMBT35200MT1G High Current Surface Mount PNP Silicon Switching Transistor for Load Management http //onsemi.com in Portable Applications 35 VOLTS Features 2.0 AMPS AEC-Q101 Qualified and PPAP Capable PNP TRANSISTOR S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements Pb-Free Packages are Available* MAXIM

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MBT35200MT1G

MBT35200MT1 High Current Surface Mount PNP Silicon Switching Transistor for Load Management in http //onsemi.com Portable Applications 35 VOLTS 2.0 AMPS MAXIMUM RATINGS (TA = 25 C) PNP TRANSISTOR Rating Symbol Max Unit Collector-Emitter Voltage VCEO -35 Vdc COLLECTOR Collector-Base Voltage VCBO -55 Vdc 1, 2, 5, 6 Emitter-Base Voltage VEBO -5.0 Vdc Collector Current - Continuou

 3.2. Size:178K  onsemi
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MBT35200MT1G

MBT35200MT1 High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications http //onsemi.com Features 35 VOLTS AEC-Q101 Qualified and PPAP Capable 2.0 AMPS S Prefix for Automotive and Other Applications Requiring Unique PNP TRANSISTOR Site and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and a

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